S6010DS2TP

Current - On State (It (RMS)) (Max):	10A
Supplier Device Package:	TO-252, (D-Pak)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 110°C
SCR Type:	Sensitive Gate
Current - Non Rep. Surge 50, 60Hz (Itsm):	83A, 100A
Current - Off State (Max):	5µA
Current - Hold (Ih) (Max):	6mA
Series:	--
Current - On State (It (AV)) (Max):	6.4A
Voltage - On State (Vtm) (Max):	1.6V
Current - Gate Trigger (Igt) (Max):	200µA
Voltage - Gate Trigger (Vgt) (Max):	800mV
Voltage - Off State:	600V
Part Status:	Active
Packaging:	Tube

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Thyristors - SCRs: S6010DS2TP Application Field and Working Principle

Thyristors are semiconductor switching devices capable of controlling large amounts of electrical power. They can be either unidirectional (which allow current to only flow in one direction) or bidirectional (which allow current to flow in both directions). One type of thyristor is the Silicon Controlled Rectifier, or SCR. The S6010DS2TP is a SCR device with a stackable dual SCR feature. In this article, we will discuss the application field and working principle of the S6010DS2TP.The S6010DS2TP is primarily used in a variety of industrial and commercial applications, such as motor drives and power conversion systems. It is also used in light dimmers, which can regulate the brightness of low-voltage AC lights, and in welding machines, which use electric current to heat metals, resulting in the formation of a welded joint.The S6010DS2TP is a dual SCR with a stackable feature, meaning that two separate SCRs can be stacked on top of each other to effectively create one individual SCR. This allows for an increased current-handling capability, making the device suitable for high-power or high-current applications.The working principle of the S6010DS2TP is based on the basic principle of a thyristor. It consists of a P and an N-type semiconductor layer, separated by a gate electrode. When a positive voltage is applied to the gate, it creates an electric field that forces electrons from the N-type layer to the P-type layer. As the number of electrons in the N-type layer decreases, current begins to flow from the P to the N-type layer, causing the device to turn on.When the gate voltage is removed, the device does not immediately turn off; instead, it will remain on until the current through the device falls below a certain level. This is known as Reverse Blocking mode and is a key feature of SCRs. The Reverse Blocking mode prevents the SCR from being damaged by the effects of a reversed current.The S6010DS2TP is also able to operate at high temperatures, typically up to 175°C, making it suitable for use in environments where high temperatures are likely to be encountered. It is capable of handling up to 256A at 60V, making it capable of controlling high power supplies.In conclusion, the S6010DS2TP is an SCR device primarily used in certain industrial and commercial applications. It has a dual SCR feature with a stackable design, allowing for an increased current handling capability. Its Reverse Blocking mode and high temperature capabilities make it suitable for use in a variety of environments.

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