S6010F1 Allicdata Electronics
Allicdata Part #:

S6010F1-ND

Manufacturer Part#:

S6010F1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: SCR NON-SENS 600V 10A TO-202
More Detail: SCR 600V 10A Standard Recovery Through Hole TO-202
DataSheet: S6010F1 datasheetS6010F1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - On State (It (RMS)) (Max): 10A
Current - Hold (Ih) (Max): 30mA
Current - Off State (Max): 10µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: TO-202 Long Tab
Supplier Device Package: TO-202
Series: --
Packaging: Bulk 
Part Status: Obsolete
Voltage - Off State: 600V
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 15mA
Voltage - On State (Vtm) (Max): 1.6V
Current - On State (It (AV)) (Max): 6.4A
Description

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Thyristors are solid state, semiconductor devices with three or four layers of alternating P-type and N-type material. The most common type is the Silicon Controlled Rectifier (SCR). The S6010F1 is a popular high power SCR that is used in a variety of applications.

The S6010F1 is a high-power, high-voltage thyristor that is capable of controlling and rectifying AC currents of up to 5000 volts and 50 amperes. It is most commonly used as a switching device in power supplies, uninterruptible power supplies, motor controls and other high power applications. It is designed to be capable of operating in an inductive or capacitive load, making it suitable for a wide range of applications.

In order to understand how the S6010F1 works it is important to understand the basic principles of a thyristor. In a three layer structure, the Gate is connected to the P-type material and the Anode is connected to the N-type material. Between these two layers is a junction of P-and-N region, called the Base or Base Region (BR).

In order for the S6010F1 to conduct current, it must be turned "on." This is done by applying a positive voltage to the gate, which causes the P-type layer to become positively charged. This in turn allows electrons to flow through the BR and out of the anode. This process of allowing current to flow through the device is called "Forward Blocking" or "Forward conduction."

Once the S6010F1 is powered on, the device holds current until the anode voltage is removed or falls below the breakdown voltage of the device. Once the anode voltage drops below the breakdown voltage, the device will stop conducting and go into "Reverse Blocking" or "Reverse conduction." When the anode voltage is removed, the device will quickly turn off and the current will stop flowing.

The S6010F1 is a popular choice for applications that require high power and voltage handling capabilities. The device is reliable and efficient, making it suitable for a wide range of applications. It is also able to withstand temperatures of up to +150°C, further making it suitable for use in high temperature environments.

The S6010F1 is an excellent choice for industrial and commercial applications that require high power and voltage handling capabilities. It is capable of switching AC currents of up to 5000 volts and 50 amperes, making it suitable for a wide range of applications. It is a reliable and efficient device, making it suitable for applications that require high power and voltage handling capabilities.

The specific data is subject to PDF, and the above content is for reference

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