S70FL01GSDPMFV013 Allicdata Electronics
Allicdata Part #:

S70FL01GSDPMFV013-ND

Manufacturer Part#:

S70FL01GSDPMFV013

Price: $ 7.19
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G SPI 80MHZ 16SO
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8) SPI - Quad I/...
DataSheet: S70FL01GSDPMFV013 datasheetS70FL01GSDPMFV013 Datasheet/PDF
Quantity: 1000
1450 +: $ 6.53480
Stock 1000Can Ship Immediately
$ 7.19
Specifications
Series: FL-S
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO
Description

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S70FL01GSDPMFV013 is a type of memory that features super-fast read and write speeds, in a low-power package, with high storage capacities. It is optimized for mobile and embedded computing applications, and is ideal for data storage and caching in a wide range of embedded applications.

S70FL01GSDPMFV013 memory uses a multi-layer cell (MLC) construction with 8 memory cells per layer. This multi-layer approach allows more cells per unit area and resulting in more data per volume, with fast read/write speeds. The data lines connected to the memory cells are arranged with a double-block line so that only two lines per cell are required, thus reducing the line length and increasing the read/write speeds.

The device is designed to achieve high speeds and offer the highest level of performance. The read/write data transmission rate is up to 200Mbps, while the round-trip access rate is up to 25nanoseconds. With this speed and an efficient design, S70FL01GSDPMFV013 supports very quick data transmission and retrieval. It also features latency times that allow for high performance operating systems.

S70FL01GSDPMFV013 memory is also designed to reduce power consumption while providing high speed and performance. The data lines are arranged in a double-block line so that only two lines per cell are required, thus reducing the line length and increasing the read/write speeds. This memory also supports low-power operating modes and pulse width modulation (PWM), which enables the user to switch between high-power and low-power modes.

S70FL01GSDPMFV013 memory features an advanced address architecture that can be used for both high speed and low power (power-managed) modes. In high speed mode, address bits are combined to enable blocks of memory to be read or programmed in parallel. In power-managed mode, the address bits are decoupled to enable individual memory locations to be read or programmed as needed.

S70FL01GSDPMFV013 memory also features an advanced error correction code (ECC) functionality. This ensures data integrity and reliability in memory reads and writes, which makes the device suitable for high-reliability applications. The ECC functionality can be used to detect and correct errors that occur while programming, reading and writing data to the memory. The ECC is also beneficial in enforcing the data integrity by verifying it before and after programming or reading/writing the data.

S70FL01GSDPMFV013 memory is suitable for applications such as mobile phones, gaming consoles, digital audio players, GPS, digital photography, digital video cameras and other embedded applications with large data storage requirements. This memory is ideal for storing and caching data, as well as for providing fast and reliable access to data, thereby improving system performance. Its high speeds and low power consumption make it suitable for a wide range of embedded applications.

The specific data is subject to PDF, and the above content is for reference

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