S70FL01GSDPBHIC10 Allicdata Electronics
Allicdata Part #:

S70FL01GSDPBHIC10-ND

Manufacturer Part#:

S70FL01GSDPBHIC10

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G SPI 80MHZ 24BGA
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8) SPI - Quad I/...
DataSheet: S70FL01GSDPBHIC10 datasheetS70FL01GSDPBHIC10 Datasheet/PDF
Quantity: 298
Stock 298Can Ship Immediately
Specifications
Series: FL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)
Description

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Memory chips are essential in modern computing. The S70FL01GSDPBHIC10 is one of the most powerful memories to hit the market in recent years. This memory chip offers high speeds and greater density, making it an ideal solution for applications requiring high-performance memory.

The S70FL01GSDPBHIC10 is designed mainly for high-efficiency computing. This device offers a combination of high speeds, low power consumption, high chip density and high-reliability features. It is suitable for use in embedded systems, consumer electronics, and telecommunications applications. These features make this chip ideal for high-end applications like personal data storage, media playback and content streaming.

The working principle of the S70FL01GSDPBHIC10 is based on NAND flash memory. NAND flash is a type of non-volatile memory that does not need to be powered constantly to retain data. It is a reliable form of memory for operations that require long-term storage or large storage capacities. NAND flash memory is composed of a matrix of transistors interconnected with the application of Fowler-Nordheim (FN) tunneling. FN tunneling is a process whereby electrons tunnel through a thin semiconductor layer formed by two different materials.

The S70FL01GSDPBHIC10 uses a single control bit line and 8 data bit lines, enabling it to offer higher speed, greater density and increased power efficiency compared to other types of flash memory. The device operates at 1.2V and is capable of obtaining read/write speeds of up to 166MB/s. It also features advanced error correction and wear-leveling algorithms, allowing it to extend its lifetime and offer data reliability at a much faster rate.

The S70FL01GSDPBHIC10 is suitable for use in a wide range of applications, including personal data storage, media playback, content streaming and more. With its combination of high speeds, low power consumption and high chip density, it can handle demanding applications with ease. Additionally, its advanced error correction and wear-leveling algorithms ensure data reliability and extend lifetime, making it the ideal solution for high-performance memory applications.

The specific data is subject to PDF, and the above content is for reference

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