Allicdata Part #: | S70FL01GSDSMFB010-ND |
Manufacturer Part#: |
S70FL01GSDSMFB010 |
Price: | $ 10.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC 1 GB FLASH MEMORY |
More Detail: | FLASH - NOR Memory IC 1Gb (128M x 8) SPI - Quad I/... |
DataSheet: | S70FL01GSDSMFB010 Datasheet/PDF |
Quantity: | 3173 |
1 +: | $ 9.09720 |
10 +: | $ 8.42499 |
25 +: | $ 8.30767 |
50 +: | $ 8.20575 |
240 +: | $ 7.19145 |
480 +: | $ 6.88055 |
720 +: | $ 6.83468 |
Series: | Automotive, AEC-Q100, FL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (128M x 8) |
Clock Frequency: | 80MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 16-SO |
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Memory
S70FL01GSDSMFB010 application field and working principle
The S70FL01GSDSMFB010 is a high-performance serial Flash memory with 1Gb capacity in 8-pin and 10-pin packages. It has an international wide voltage rating from 1.7V to 3.6V and a wide temperature range from -40℃ to 85℃. It is based on a split-gate cell structure, a tunable word line programmable feature and an industry-standard Serial Peripheral Interface. This type of Flash memory is used in a variety of applications including high-end consumer, industrial and automotive products.
In general, Flash memory operates in a manner that allows logic states to be stored in its cells. When performing a write operation, an electric current passes through the memory cells, modifying the electric field in order to change the state of each cell. The cells can then be programmed and erased in a process known as programming and erasing. The storing and erasing of data is done on a large number of cells in parallel, making it possible to handle large amounts of data quickly.
The S70FL01GSDSMFB010 Flash memory is designed to make use of the advanced Split-gate Cell Structure. This means that each memory cell contains only two transistors, a transfer gate and a control gate. The Split-gate Cell Structure is much more efficient than the traditional floating gate structure since it is faster, consumes less power, and has better retention characteristics.
The S70FL01GSDSMFB010 also uses a tunable word line programmable feature. This feature allows the access time to be adjusted to accommodate the individual requirements of a device. For example, if a device needs a faster write or erase operation, then the word line voltage can be adjusted to increase the speed. On the other hand, if a slower operation is desired, then the voltage can be turned down to reduce the speed.
The S70FL01GSDSMFB010 also features an industry-standard Serial Peripheral Interface (SPI), which is designed to allow communication between two devices. This is useful because it allows the Flash memory to easily be integrated into existing circuits. The SPI also makes the memory easier to program and debug, as well as making it easier and faster to access data.
Flash memory is becoming ever more popular and as a result, the S70FL01GSDSMFB010 is becoming increasingly popular as well. It is used in a wide range of consumer, industrial and automotive applications that require large amounts of data to be stored securely and quickly. The advanced split-gate cell structure, tunable word line programming and industry-standard SPI make it an ideal choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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S70FL01GSDPMFV013 | Cypress Semi... | 7.19 $ | 1000 | IC FLASH 1G SPI 80MHZ 16S... |
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S70FS01GSAGMFI010 | Cypress Semi... | -- | 1000 | IC FLASH 1G SPI 133MHZFLA... |
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