S70FS01GSAGMFV010 Allicdata Electronics
Allicdata Part #:

S70FS01GSAGMFV010-ND

Manufacturer Part#:

S70FS01GSAGMFV010

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G SPI 133MHZ
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8) SPI - Quad I/...
DataSheet: S70FS01GSAGMFV010 datasheetS70FS01GSAGMFV010 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: FS-S
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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The S70FS01GSAGMFV010 is a type of memory device typically used in various computing-related applications. It is most commonly used in embedded systems, industrial control systems, and automotive applications due to its high-speed operation and low power consumption. The S70FS01GSAGMFV010 utilizes an EEPROM (electrically-erasable programmable read-only memory) technology design that allows for quick and efficient storage of data.

The S70FS01GSAGMFV010 comes with a variety of features, including an operating temperature range of -40°C to 85°C. Additionally, this device has an MTBF (mean time between failure) of 1.5 million hours and offers data retention of up to 20 years. The memory has a write cycle endurance of 10,000, meaning that data can be written and rewritten a maximum of 10,000 times before needing to be replaced.

The S70FS01GSAGMFV010 is typically used for applications that require large amounts of data to be stored in a small amount of space. This type of memory device is especially useful for device makers who need a reliable and efficient method of storing data. Its high write cycle endurance and low power consumption make the S70FS01GSAGMFV010 a top choice for device makers.

The working principle of the S70FS01GSAGMFV010 is based on a series of capacitors. When power is supplied to the device, electrons are stored in a thin layer of silicon located between two conductors. When the capacitor is charged, data is written to it and stored until the capacitor discharges. Data can be read from the memory device by supplying power to the electrodes, which causes the electrons to flow from the capacitor and into an output device. The data is then processed and stored in the memory device.

The S70FS01GSAGMFV010 is ideal for applications that require quick data storage and retrieval. Its compact design and low power consumption make it a popular choice for device makers. Furthermore, its long data retention period makes it well-suited for long-term storage of data. As a result, the S70FS01GSAGMFV010 is a reliable and efficient choice for any type of application that requires quick data storage.

The specific data is subject to PDF, and the above content is for reference

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