S70FL01GSDSMFV010 Allicdata Electronics
Allicdata Part #:

S70FL01GSDSMFV010-ND

Manufacturer Part#:

S70FL01GSDSMFV010

Price: $ 8.11
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC 1 GB FLASH MEMORY
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8) SPI - Quad I/...
DataSheet: S70FL01GSDSMFV010 datasheetS70FL01GSDSMFV010 Datasheet/PDF
Quantity: 1000
240 +: $ 7.37058
Stock 1000Can Ship Immediately
$ 8.11
Specifications
Series: FL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S70FL01GSDSMFV010 is a kind of memory component, and as such it is found in various consumer electronics products, from laptops to tablets, to smartphones. Its various applications are highlighted by its abilities to store files in a small package size, and provide high read/write speeds. It is made up of a single die of the 1Gbit SLC NAND Flash memory and a mobile DDR buffer, and its applications are largely focused around mobile device connectivity.

In terms of its working principle, the S70FL01GSDSMFV010 works much like any other NAND Flash memory component. In a nutshell, it is composed of two electrodes – the cathode and anode – which charge and store electrical signals that are read, written or erased as bits or bytes and stored on a device. When the user needs to read, write or erase data stored in the memory cell, a voltage is applied to the electrodes, and this changes the amount of stored electrical charge – effectively, storing a bit in the memory.

The mobile DDR buffer is an additional component of the S70FL01GSDSMFV010 and is used to boost the speed required for reading and writing data to the memory cell. It helps to increase the rate of read/write operations from the NAND Flash memory, as well as providing greater overall data capacity and improved performance. The DDR buffer is composed of several memory cells, and thanks to its inclusion the S70FL01GSDSMFV010 can provide up to 49MB/s in read/write speeds.

Thanks to its ability to provide fast read/write performance and its small package size, the S70FL01GSDSMFV010 is becoming increasingly popular in consumer electronics applications. It is used in devices such as laptops, tablets, and smartphones, and is also finding its way into home appliances, where its fast read/write speeds and small package size make it ideal as a memory component. Furthermore, its high read/write speeds make it a great choice for high-speed digital video and audio applications.

The S70FL01GSDSMFV010 is a powerful and versatile memory component, and its use in today’s consumer electronics products shows just how much its potential has been utilized by the industry. Its combination of small package size and fast read/write speeds make it an ideal choice for a range of applications, from home appliances to smartphones.

The specific data is subject to PDF, and the above content is for reference

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