S70FS01GSAGBHM213

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The S70FS01GSAGBHM213 is a high-performance, low-power NAND flash memory device that combines a floating gate cell array and an advanced CMOS logic circuit. The device integrates a DRAM cache buffer, an ECCcontroller, multiple-die support, and a pseudo-SRAM interface into a single chip.

Memory

Application Field of S70FS01GSAGBHM213

The S70FS01GSAGBHM213 is ideal for applications that require a high-density, reliable NAND Flash memory solution requiring minimal lag time and power consumption. The device is commonly used for automotive infotainment systems, medical record storage, digital media players, industrial controllers, and mobile devices. As a result, the S70FS01GSAGBHM213 is widely used in many modern applications.

Working Principle of S70FS01GSAGBHM213

The S70FS01GSAGBHM213 uses an internal floating gate cell (FGC) array and an ECC controller to achieve its performance. Each FGC consists of an oxide polysilicon floating gate between two gates. The data is stored in a binary code, with ‘1’ and ‘0’ represented by the presence and absence of electrons on the polysilicon gate. The FGC array stores data in a serial manner and can store up to 6 bits of data. The ECC controller is responsible for maintaining error-correcting codes and correcting errors in stored data.

In order to write data to the device, the gate voltage on the gate of the FGC must be adjusted to allow electrons to flow onto the FGC. The amount of current that passes through the FGC is determined by the gate voltage, with higher voltages allowing more current to flow. Thus, the gate voltage is adjusted to represent the appropriate binary data. Similarly, the gate voltage is adjusted to retrieve the data from the FGC.

The S70FS01GSAGBHM213 offers excellent power consumption and performance due to the integration of multiple components on the same chip. The use of FGCs ensures high reliability and data integrity as well as low power consumption. The integrated ECC controller ensures data reliability by correcting errors in the data. The device also includes a DRAM cache buffer which increases system performance by allowing data to be written and read faster. Additionally, the use of a pseudo-SRAM interface further enhances data transfer speeds.

The S70FS01GSAGBHM213 is a powerful, low-power NAND flash memory device that offers excellent performance and power consumption. It is well-suited for a number of applications, including automotive infotainment systems, medical record storage, digital media players, industrial controllers, and mobile devices. It uses a floating gate cell array and an ECC controller to ensure data reliability, as well as a DRAM cache buffer and pseudo-SRAM interface to increase data transfer speeds.

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