S70FS01GSDSBHM210

Series:	Automotive, AEC-Q100, FS-S
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	1Gb (128M x 8)
Clock Frequency:	80MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	1.7 V ~ 2 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-BGA (8x6)

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Introduction

S70FS01GSDSBHM210 is a reliable, low-power and cost-effective solid state drive (SSD), designed to meet the needs of memory storage applications in the storage area. It combines the advantages of capacity and power management capabilities, while providing solid performance and reliability. In this article, we will discuss the application field and working principle of this SSD.

Application Field of S70FS01GSDSBHM210

S70FS01GSDSBHM210 is designed to meet the needs of embedded applications such as consumer and industrial solutions, automotive, medical and aerospace. This SSD fits in horizontally and vertically integrated solutions, occupying same board real estate and power as a 2.5" HDD. Besides, its power management meets the requirements of mobile and embedded applications, as well as consumer systems constrained by power budgets.S70FS01GSDSBHM210 is an ideal solution for mission and data-critical tasks, such as industrial computing, embedded safety and control systems, enterprise and industrial server, military and aerospace systems, industrial automation, data centers, and embedded electronics. Its non-volatile NAND flash memory provides high I/O throughput, low latency and fast write performance, thus providing ultimate durability and reliability in the data storage market.

Working Principle of S70FS01GSDSBHM210

The working principle of S70FS01GSDSBHM210 is based on its internal flash-based NAND memory. The NAND memory is organized into cells, and each cell stores one byte or two bytes of data. Each cell is then divided into four pages, and each page can store one byte of data or two bytes of data. All of the cells in the NAND memory are linked together to form a logical address space.When data is written to the NAND memory, the data is written to one of the four pages of the cell. This allows the NAND memory to store more data than it would otherwise be able to store in one cell. The data is then stored in the memory in blocks, which are made up of a collection of pages. With this arrangement, solid state drive (SSD) can store more data than it would otherwise be able to store in the same NAND memory.When the S70FS01GSDSBHM210 receives a read or write request, the controller uses an algorithm to locate the corresponding data at a block-level address. After the requested page is identified, the memory controller converts the logical page address into an actual page address. Once the controller locates the data, it is either read from or written to the NAND memory according to the request.

Conclusion

S70FS01GSDSBHM210 is a cost-effective, low-power and reliable solid state drive (SSD) designed to meet the needs of memory storage applications in the storage area. It features excellent performance and reliability, as well as power management capabilities, making it an ideal solution for mission and data-critical tasks. Thanks to its internal NAND flash memory, S70FS01GSDSBHM210 can store more data than it would otherwise be able to store in one cell. Thus, it can provide excellent durability and reliability in the data storage market.

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