S70GL02GP12FFI022 Allicdata Electronics
Allicdata Part #:

S70GL02GP12FFI022-ND

Manufacturer Part#:

S70GL02GP12FFI022

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 64FBGA
More Detail: FLASH - NOR Memory IC 2Gb (256M x 8, 128M x 16) Pa...
DataSheet: S70GL02GP12FFI022 datasheetS70GL02GP12FFI022 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: GL-P
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8, 128M x 16)
Write Cycle Time - Word, Page: --
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)
Description

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S70GL02GP12FFI022 is a type of Memory device developed by Samsung. It is a 2Gb NAND Flash device that is designed for high-performance data storage and transfer. Its main application field is in system memory, such as embedded systems and multimedia products. It is also suitable for a range of other applications, such as mass storage, enterprise storage, and digital photography.

The S70GL02GP12FFI022 Memory is made up of 64 memory cells which each hold 32 bits of data. Each cell is divided into 8 pages, each containing 4 bits of data. The device is organized in 3 levels: a chip level, a block level and a page level. The chip level is divided into 4 pages, each containing 4 blocks of data. The block level consists of 512 pages, while the page level contains 64 pages.

The S70GL02GP12FFI022 Memory device is designed to offer high performance and system flexibility. It features an intuitive interface for memory access and a high-speed data transfer rate of up to 72 Mbps. The device also has a low power consumption, allowing for longer battery life and higher system efficiency. Additionally, the S70GL02GP12FFI022 Memory device offers two NAND interfaces (plurality) for connecting to different memory systems, with support for both SPI and SD/MMC interfaces.

The working principle of the S70GL02GP12FFI022 Memory device is based on the concept of flash memory. Flash memory devices use floating-gate transistors, which act as switches that store information by trapping electrical charges. The memory cell can be programmed to store up to 4 bits of data, and the device can address up to 64 total pages of data. The memory can be written to, erased and rewritten multiple times. The device also has a built-in controller that allows for error checking and correction, as well as a built-in read/write error code generator. In addition to the controller, the device includes a number of peripheral circuits, such as transistors, for holding the data and controlling the reading and writing processes.

The S70GL02GP12FFI022 Memory device can be used in a wide range of applications, from embedded systems, to mass storage solutions and digital photography. Its small size and low power consumption make it ideal for embedded systems, while its fast data transfer rate and high level of flexibility make it suitable for more demanding applications. Additionally, its intuitive interface makes it easy to use, while its built-in controller and read/write error code generator enable higher levels of system reliability.

The specific data is subject to PDF, and the above content is for reference

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