S70GL02GT11FHB010 Allicdata Electronics
Allicdata Part #:

S70GL02GT11FHB010-ND

Manufacturer Part#:

S70GL02GT11FHB010

Price: $ 18.12
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 64FBGA
More Detail: FLASH - NOR Memory IC 2Gb (256M x 8, 128M x 16) Pa...
DataSheet: S70GL02GT11FHB010 datasheetS70GL02GT11FHB010 Datasheet/PDF
Quantity: 1000
180 +: $ 16.46780
Stock 1000Can Ship Immediately
$ 18.12
Specifications
Series: Automotive, AEC-Q100, GL-T
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8, 128M x 16)
Write Cycle Time - Word, Page: --
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)
Description

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Memory: S70GL02GT11FHB010 application field and working principle

S70GL02GT11FHB010 is a high-performance 2Gb NAND Flash memory product developed by Samsung Electronics. It is composed of two NAND Flash memory chips: S71GL02GT and 11FHB010.

The S71GL02GT is a NAND Flash memory device with an easy-to-use, small footprint and low power consumption. This device supports 8 bit, 16 bit and 32 bit configuration widths and industry standard single I/O and quad I/O modes. It also supports multiple die configurations and provides up to 2 GB of memory in a single die. The 11FHB010 is a high-performance, flexible I/O controller that supports various NAND flash products.

The primary use of S70GL02GT11FHB010 is as an embedded memory solution. It can be used for industrial and consumer applications such as GPS, portable medical equipment, digital still cameras, multimedia players, and other consumer electronics products. In addition to being used for data storage in these products, it is also used for memory expansion and system management.

S70GL02GT11FHB010 uses a NAND (“Not-AND”) gate composition to store data. This type of device is different from NOR Flash in that it uses multiple transistors to store bits of data. As a result, it is much more dense and requires significantly less power than NOR Flash. The device also features an on-die ECC engine that improves the reliability of the data stored in the device.

S70GL02GT11FHB010 works in conjunction with the 11FHB010 NAND Flash controller chip to provide reliable, high-performance storage solutions for embedded systems. The 11FHB010 supports small page, large page, multiple plane, and multiply plane large page NAND Flash. It also features powerful Error Correction Code (ECC) capabilities and adjustable refresh cycles. It also supports low voltage operations and supports the industry standard NAND Flash commands.

The 11FHB010 supports a wide range of NAND Flash products, including SLC and MLC NAND Flash. It has an on-chip ECC engine which improves the reliability of data stored in the device. It also supports multiple die configurations and provides up to 2GB of memory in a single die.

In summary, S70GL02GT11FHB010 is a high-performance NAND Flash memory device that can be used in a variety of applications. It offers reliable, high-performance storage solutions for embedded systems, and is suitable for use in industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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