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Memory

The S70GL02GS11FHI020 is a NAND Flash memory designed for high-performance and reliability, suitable for embedded applications. Specifically, this type of memory is ideal for large programs since it offers extremely fast speeds, low power consumption, a compact size and support for large numbers of read/write cycles. It offers a cost-effective solution for many applications, as it combines high-speed memory technology with a very low cost per bit.

The S70GL02GS11FHI020 is a multichip package (MCP) consisting of two 16Gbit single-level-cell (SLC) NAND Flash memory dies with a TSOP48 package. Each die is composed of 16 million 2K pages, 1M blocks with 64 bytes page size. The flash supports synchronous interface and is suitable for read-intensive and random read/write operations.

Application Field

The S70GL02GS11FHI020 is suitable for a variety of embedded memory applications, such as medical equipment, automotive systems, industrial systems, consumer electronics, and telecommunication equipment. In particular, this device is optimized for mobile devices and tablets, as its high-performance and low power consumption provide a great advantage.

The device offers very high throughput speeds and supports up to 15ns program time and up to 25ns erase time. It is extremely power-efficient, consuming only 0.017 mA on the read cycle, 0.021 mA on the program cycle, and 0.049 mA on the erase cycle.

The S70GL02GS11FHI020 is an ideal choice for applications that require sustained data storage such as data logging, data recording, and streaming applications.

Working Principle

NAND Flash memory works by trapping electrons into a floating gate, using a very thin layer of oxide. These electrons act as a switch, allowing NAND memory to write, store, and read data in a very efficient manner. This is done through the application of an appropriate programming voltage across the gate oxide layer, which traps the electrons in the gate.

The programming process of the S70GL02GS11FHI020 is similar to other NAND Flash devices. The data to be written is first divided into blocks, and then written to the NAND Flash die. Each block consists of an array of 32 pages, and each page contains an array of 64 bytes of data.

The data can be written and erased by applying a specific voltage. In read operations, electrical currents are sent to the device to determine the state of the trapped electrons. If the electrons are in the floating gate state, they will pass through the channel and cause current to flow from the drain to the source. If the electrons are not in the floating gate state, then no current flows.

NAND Flash memory technology is widely used in a variety of applications due to its fast speeds, compact size, and low power consumption. The S70GL02GS11FHI020 is a great device for high-performance embedded applications, thanks to its high data rate and low power consumption.

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