Allicdata Part #: | S70GL02GS11FHSS60-ND |
Manufacturer Part#: |
S70GL02GS11FHSS60 |
Price: | $ 12.73 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 2G PARALLEL 64FBGA |
More Detail: | FLASH - NOR Memory IC 2Gb (128M x 16) Parallel 11... |
DataSheet: | S70GL02GS11FHSS60 Datasheet/PDF |
Quantity: | 1000 |
180 +: | $ 11.56450 |
Series: | GL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 2Gb (128M x 16) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-FBGA (11x13) |
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S70GL02GS11FHSS60 is a type of Memory that can be used by many different applications. It is commonly used in many different types of computers and other electronic devices.
The S70GL02GS11FHSS60 consists of two parts: a base board and a chip. The base board is used to mount the chip to the system, while the chip contains the actual memory chips. The chip consists of two types of memory chips: DRAM and NAND. The DRAM chips store data temporarily, while the NAND chips are used for permanent storage.
The S70GL02GS11FHSS60 has a maximum capacity of 8GB, meaning it can store up to eight gigabytes of data. It is able to hold more data than other types of Memory due to its high-density design. This makes it well suited for applications such as servers, gaming systems, and large memory-demanding applications.
Another feature of the S70GL02GS11FHSS60 is its low power consumption. This makes it ideal for applications that require power-efficient usage. Additionally, it has a high read/write speed, making it ideal for applications that require fast performance.
As well as providing high performance and low power consumption, the S70GL02GS11FHSS60 also has high levels of durability. It is able to withstand extreme temperatures and shocks, making it suitable for use in industrial and rugged environments.
The working principle of the S70GL02GS11FHSS60 is based on NAND flash Memory technology. This technology is based on floating-gate transistors, which control the flow of electrons between Memory cells. The Memory cells are made up of metal oxide semiconductor channel, which is responsible for the storage and retrieval of data.
When data is written to the S70GL02GS11FHSS60, the voltage applied to each transistor gate influences the cell\'s current state. This state is then stored in the Memory cell and is not altered unless the voltage is changed. When data is read from the cell, the cell\'s current state is determined from the voltage applied to it.
The S70GL02GS11FHSS60 Memory is used in a wide range of applications. It is ideal for gaming systems, industrial applications, and large memory-demanding applications. It is also used in embedded systems, where its high-density design and low power consumption make it a popular choice. The S70GL02GS11FHSS60 Memory is also used in consumer electronic devices, as it provides an excellent balance of performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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