S70GL02GT11FHI010 Allicdata Electronics
Allicdata Part #:

S70GL02GT11FHI010-ND

Manufacturer Part#:

S70GL02GT11FHI010

Price: $ 15.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 64FBGA
More Detail: FLASH - NOR Memory IC 2Gb (256M x 8, 128M x 16) Pa...
DataSheet: S70GL02GT11FHI010 datasheetS70GL02GT11FHI010 Datasheet/PDF
Quantity: 1000
1 +: $ 14.04900
Stock 1000Can Ship Immediately
$ 15.46
Specifications
Series: GL-T
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8, 128M x 16)
Write Cycle Time - Word, Page: --
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)
Description

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Memory has been a critical component within the technological infrastructure of our lives for decades. With the advancements in computing technology, faster *and**higher capacity storage devices are becoming increasingly important in powering our connected world. The S70GL02GT11FHI010 is a memory device that stands out from the rest. It is widely used in various applications, from medical technology to consumer electronics, due to its versatility and reliability. This article will provide an overview of the S70GL02GT11FHI010 application field and its working principle.

The S70GL02GT11FHI010 memory device is a new-generation serial NOR Flash with a high bandwidth. It offers a fast read speed up to 80MHz, which makes it ideal for applications that require high-speed data transfer, such as smart phones, industrial automation systems and consumer electronics. The S70GL02GT11FHI010 also features low power consumption, making it an ideal memory device for mobile applications, where battery life and performance are essential. Additionally, it is available in a wide range of capacities, ranging from 256Mb to 16Gb, making it ideal for applications that require large amounts of data storage.

The working principle of the S70GL02GT11FHI010 memory device is fairly straightforward. It uses a series of semiconductor technology called NAND flash to store data. The NAND flash acts like a regular storage device, but instead of using spinning discs, data is written to and read from cells, located on the chip by using either electrical or optical signals. The S70GL02GT11FHI010 also features advanced error correction code (ECC) technology, which is used to detect and correct errors that may occur during data transfer.

The S70GL02GT11FHI010 is an excellent choice for many applications due to its high performance, low power consumption and wide range of capacities. It is a great option for applications that require large amounts of data storage, fast data transfer and robust error correction capabilities. It is also suitable for medical, industrial and consumer applications, where reliability and performance are essential.

In conclusion, the S70GL02GT11FHI010 is an incredibly versatile memory device that is highly reliable and capable of delivering excellent performance in a wide range of applications. Its fast read and write speed, low power consumption and wide range of capacities make it the ideal choice for applications that require large amounts of data storage, fast data transfer and advanced error correction capabilities.

The specific data is subject to PDF, and the above content is for reference

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