SA614AD/01,112 Allicdata Electronics
Allicdata Part #:

568-12141-5-ND

Manufacturer Part#:

SA614AD/01,112

Price: $ 2.72
Product Category:

RF/IF and RFID

Manufacturer: NXP USA Inc
Short Description: IC FM IF SYSTEM LOW PWR 16-SOIC
More Detail: RF IC FM IF System Cellular, ASK, FSK 25MHz RSSI E...
DataSheet: SA614AD/01,112 datasheetSA614AD/01,112 Datasheet/PDF
Quantity: 33
1 +: $ 2.46960
10 +: $ 2.21571
Stock 33Can Ship Immediately
$ 2.72
Specifications
Series: --
Packaging: Tube 
Part Status: Last Time Buy
Function: FM IF System
Frequency: 25MHz
RF Type: Cellular, ASK, FSK
Secondary Attributes: RSSI Equipped
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SO
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF Misc ICs and Modules

The SA614AD/01,112 is a monolithic low-voltage microphone preamplifier designed for use in RF applications. It combines low distortion, high gain and low noise levels in a single package. The SA614AD/01,112 is ideal for use in many types of high-performance wireless systems.The SA614AD/01,112 is a dual-gate FET amplifier that is designed for low-noise input stages in RF systems. It is optimized for low noise and low distortion operation in the 100 kHz to 10 MHz frequency range. The amplifier features high gain, low input bias current, and low output offset voltage. The SA614AD/01,112 is powered by a single 5V supply and can operate from -40 to +85°C.The SA614AD/01,112 operates by amplifying signals from a small microphone or other low-level noise sources in a wireless system. The amplifier is designed to provide low-noise amplification of the input signal, while maintaining high gain and low distortion. The amplifier features an adjustable gain control, which allows users to optimize the gain of the amplifier for their particular application.The amplifier consists of a pair of complementary FET (Field Effect Transistors) connected in parallel. The input signal is applied to the gates of the FETs which then drive the drain of the FETs. The drain current is amplified, resulting in the output signal. The amplifier also features a balanced feedback network which helps to reduce distortion and improve signal-to-noise performance.The key advantages of the SA614AD/01,112 include low noise and low distortion for high-performance amplifiers, high gain, low input bias current, low output offset voltage, and a wide operating temperature range. The SA614AD/01,112 is ideal for use in a variety of applications including RF receivers and transmitters, low power microphones, and wireless hands-free systems.

The specific data is subject to PDF, and the above content is for reference

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