| Allicdata Part #: | SB560A-E3/54-ND |
| Manufacturer Part#: |
SB560A-E3/54 |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE SCHOTTKY 60V 5A DO201AD |
| More Detail: | Diode Schottky 60V 5A Through Hole DO-201AD |
| DataSheet: | SB560A-E3/54 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.13000 |
| 10 +: | $ 0.12610 |
| 100 +: | $ 0.12350 |
| 1000 +: | $ 0.12090 |
| 10000 +: | $ 0.11700 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 60V |
| Current - Average Rectified (Io): | 5A |
| Voltage - Forward (Vf) (Max) @ If: | 700mV @ 5A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 500µA @ 60V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AD, Axial |
| Supplier Device Package: | DO-201AD |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Base Part Number: | SB560 |
Description
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SB560A-E3/54 Application Field and Working Principle
Introduction
SB560A-E3/54 is a silicon rectifier designed with diffusion-bonded construction. It is one of the most widely used single diodes. This series of rectifiers provides excellent forward surge capability and high-temperature Reverse leakage.Application Field
SB560A-E3/54 is suitable for a variety of applications:- Alternating current (AC) applications, such as light dimmer, electronic turn signal and electronic time switch- AC power switching applications such as heating, ventilation, air conditioning (HVAC) and motor control used in appliance control- Power supply which requires high precision control- DC switching applications such as light-emitting diode (LED) lighting- Uninterruptible power supply (UPS) systemWorking Principle
SB560A-E3/54 is a PN junction diode, which consists of two N-type silicon layers separating two P-type silicon layers. The P-silicon layer region near the junction is depleted of semiconductor carriers when reverse voltage is applied, forming a diode. In forward-biased operation, the diode conducts current and a voltage drop across the diode results. In the reverse-biased condition, the depletion region prevents current flow.The current--voltage (I-V) characteristics of this device is shown in Figure 1. This characteristic is more of a curve type than a straight line. The voltage across the diode is about 0.7V for the forward bias condition and nearly 0V for the reverse bias condition.
The specific data is subject to PDF, and the above content is for reference
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SB560A-E3/54 Datasheet/PDF