SB560ET-G Discrete Semiconductor Products

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Diodes are used in almost all electrical circuits for a variety of purposes. A diode is a two-terminal electronic component with a non-linear current-voltage (IV) relationship. Diodes are the simplest and most fundamental of all the semiconductor active devices. The SB560ET-G is a high speed switching rectifier Schottky barrier diode, specifically designed for high current, low voltage applications in an industry-standard, very small outline surface-mount package.

The SB560ET-G is part of the series of SBD (Schottky Barrier Diode) devices that are designed for superior performance in high frequency switching applications and offer significant advantages over conventional PN-junction rectifiers. Schottky diodes are ideal for low voltage, high frequency rectification. Their low voltage drop, low reverse recovery time and small forward voltage drop make them ideal for applications ranging from reverse battery protection to high current switching and rectification.

The SB560ET-G has a reverse voltage rating of 55 volts and a forward current rating of 5 amperes. It has a maximum forward voltage drop of 0.45 volts at a 5 ampere load current, a reverse leakage current of 0.01 microamperes at a reverse voltage of 55 volts, and a reverse recovery time of 60 nanoseconds. The Schottky Barrier Diode features an unprecedented ability to handle high switching speed and current with excellent ease.

The SB560ET-G\'s applications include reverse bias protection, high-frequency rectification and switching, low-side switching, high-side switching, DC-to-DC converters and power circuitry for telecommunications systems, data storage devices, and automotive applications.

The working principle of the SB560ET-G is based on the Schottky barrier effect. The metal-semiconductor junction in a Schottky diode is formed using a metal (typically made of platinum, nickel or titanium-tungsten) in contact with a semiconductor material such as silicon. The metal-semiconductor junction has a lower forward voltage than the junction of a conventional diode, making the diode ideal for low voltage applications. In addition, the metal-semiconductor junction has a low reverse leakage current, making it ideal for applications that require a low reverse current.

When a suitable forward voltage is applied across the SB560ET-G Schottky barrier diode, electrons in the metal contact will be repelled away from the junction and into the semiconductor material. As they move through the semiconductor material, they will combine with the vacancies of the atoms, forming a channel in which the current will flow. If a reverse voltage is applied, the electrons will be pushed away from the junction area, preventing any current from flowing.

The SB560ET-G is easy to use and has a wide range of applications, making it an ideal choice for any circuit that requires high current, low voltage application. It offers superior performance, reliability and ease of use, making it an excellent choice for any circuit design.

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