Allicdata Part #: | SBRT05U20LPQ-7B-ND |
Manufacturer Part#: |
SBRT05U20LPQ-7B |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SBR 20V 500MA X1-DFN1006-2 |
More Detail: | Diode Super Barrier 20V 500mA Surface Mount X1-DFN... |
DataSheet: | SBRT05U20LPQ-7B Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.07285 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Super Barrier |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 390mV @ 500mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 6ns |
Current - Reverse Leakage @ Vr: | 50µA @ 20V |
Capacitance @ Vr, F: | 14pF @ 20V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-UFDFN |
Supplier Device Package: | X1-DFN1006-2 |
Operating Temperature - Junction: | -65°C ~ 150°C |
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The SBRT05U20LPQ-7B is a kind of single rectifier diode. It is composed of silicon epitaxial planar with high voltage, low current type PN junction, metal plastic package and other components. This diode is used to convert AC (alternating current) of different frequencies into DC (direct current) of stable value. As the SBRT05U20LPQ-7B is designed to minimize power loss, it is most suitable for rectifying performance which is measured by the forward biased voltage-current characteristic.
The application field of SBRT05U20LPQ-7B includes many aspects including power rectification, switching, and detection of low level signals. It is mainly used in the process of power rectification. For example, it can be used together with a transformer to create a single-phase or three-phase rectifier, which is the most commonly used kind of rectification system.
The working principle of SBRT05U20LPQ-7B is based on the characteristics of a semiconductor. When a forward bias is applied to the PN junction, it forms an electron hole depletion layer featuring an electrical resistance. As the applied voltage further increases, the depletion layer further decreases, and the diode begins to pass a larger current corresponding to the applied voltage. In addition, the reverse bias breakdown voltage of the diode can be used to protect circuits from a large reverse voltage.
The SBRT05U20LPQ-7B offers several advantages such as low forward voltage drop (Vf) for high efficiency, its high peak repetitive reverse voltage rating (PRRV) allowing reverse voltage protection, and a relatively fast recovery time as required by some switching applications. In order to ensure the long-term stability of the diode, a special PN junction was developed to reduce the influence of thermal stress and temperature changes.
Besides the above mentioned power rectifying applications, SBRT05U20LPQ-7B can also be used as a detector and switch. By taking advantage of its forward voltage drop and reverse voltage protection, single-rectifier diodes can be used in many electrical circuits. It is mainly used to detect low-level signals or to switch high-power signals. Moreover, it can also be used to build a half-wave rectifier, which has much higher efficiency than a full-wave rectifier, and can effectively filter out out-of-phase signals.
Overall, the SBRT05U20LPQ-7B is a single rectifier diode offering significant advantages for power rectification, switching, and detection of low level signals. It is mainly used for power rectification and its PN junction and special thermal stress resistance ensure the long-term stability of the diode. It can also be used as a detector and switch, or in a half-wave rectifier or a full-wave rectifier.
The specific data is subject to PDF, and the above content is for reference
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