| Allicdata Part #: | SBRT25M50SLP-13-ND |
| Manufacturer Part#: |
SBRT25M50SLP-13 |
| Price: | $ 0.41 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | DIODE SBR 50V 25A POWERDI5 |
| More Detail: | Diode Super Barrier 50V 25A Surface Mount PowerDI5... |
| DataSheet: | SBRT25M50SLP-13 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.36868 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Super Barrier |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 25A |
| Voltage - Forward (Vf) (Max) @ If: | 550mV @ 25A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 120µA @ 50V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PowerDI5060-8 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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The SBRT25M50SLP-13 is a rectifying diode ranging from 25A to 50A in a power package form. This diode can be used as a bridge in a bridge-based rectifying diode circuit. Its package has an extremely low thermal resistance, so it provides a good environment for operation. The SBRT25M50SLP-13 is widely used in a variety of applications, including:
- DC-DC converters
- High-power inverters
- Battery charging
- Motor control
The working principle of the SBRT25M50SLP-13 is centered around its silicon bodies and its optimized heat sink design. The model has been designed to provide a low thermal resistance, making it well suited for high-power applications. There are two distinct cathode and anode legs on the device, which allow it to be used either as a P-type rectifying diode or a N-type rectifying diode. In a normal P-type rectifying diode, the anode is connected to the positive side of a voltage source, and the cathode is connected to the negative side of the voltage source. In a N-type rectifying diode, the cathode is connected to the positive side of the voltage source, and the anode is connected to the negative side of the voltage source. When current is applied, the silicon bodies and their optimized heat sink design act to reduce their temperature and help dissipate heat. Additionally, the model also has a Cathode Inductance Reduction (CIR) feature, which is designed to reduce the inductive voltage at the junction centre, thus reducing the power losses caused by the current during operation.
In addition to the CIR feature, the SBRT25M50SLP-13 also has other advantages, such as its EMI suppression, its high frequency response and its temperature stability. These features all contribute to the high performance of the model. The high frequency response allows the device to be used in applications with high speed switching. The EMI suppression feature helps to reduce electromagnetic interference, which can affect other devices in the same vicinity. Finally, the temperature stability of the device enables it to be used in applications which require it to operate efficiently at various temperatures.
In summary, the SBRT25M50SLP-13 is a rectifying diode with many benefits. Its optimized heat sink design and its other features, such as its EMI suppression, high frequency response and temperature stability, make it well suited for high power applications. Additionally, it has a low thermal resistance, making it ideal for high current applications. As such, the SBRT25M50SLP-13 is a versatile diode, which is suitable for a variety of applications, including DC-DC converters, high-power inverters, battery charging and motor control.
The specific data is subject to PDF, and the above content is for reference
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SBRT25M50SLP-13 Datasheet/PDF