SBRT10U50SP5-13D Discrete Semiconductor Products |
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Allicdata Part #: | SBRT10U50SP5-13DDITR-ND |
Manufacturer Part#: |
SBRT10U50SP5-13D |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SBR 50V 10A POWERDI5 |
More Detail: | Diode Super Barrier 50V 10A Surface Mount PowerDI®... |
DataSheet: | SBRT10U50SP5-13D Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.16840 |
10000 +: | $ 0.16216 |
Specifications
Part Status: | Active |
Diode Type: | Super Barrier |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 450mV @ 10A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 300µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | PowerDI™ 5 |
Supplier Device Package: | PowerDI®5 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Description
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Introduction
The SBRT10U50SP5-13D is a rectifier diode which can be used in a number of applications. It is widely used in computer system power regulation circuits, power supplies, and other industries for AC and DC rectification. The SBRT10U50SP5-13D has a number of features that make it a good choice for these applications, including low electrical noise, no need for an additional heat sink, and low forward voltage drop. In this article, we will look at the SBRT10U50SP5-13D’s application field and working principle.Application Field
The SBRT10U50SP5-13D is well suited for applications where rectification is critical as it has a very low forward voltage drop and is capable of handling large currents with very little power dissipation. It is widely used in computer system power regulation circuits, power supplies, and other industries for AC and DC rectification.The SBRT10U50SP5-13D can be used in power supplies where storing potential energy is required. It works well in rectifier circuits used to convert AC power from the electrical supply into DC power for use in the processor and other components. As the device has a very low forward voltage drop, it helps reduce power losses and allows for increased efficiency in the power supply.The SBRT10U50SP5-13D can also be used as a protection device. In applications where a large amount of power is used, the rectifier can be used to prevent surges that could damage the equipment. The high breakdown voltage of the SBRT10U50SP5-13D makes it suitable for the high current and voltage requirements of a surge-resistant rectifier.Working Principle
The SBRT10U50SP5-13D is a rectifier diode which uses a small space charge as its medium to convert AC into DC. The reverse current is blocked when the voltage is low, while current flows when the voltage is high. The SBRT10U50SP5-13D has a very low forward voltage drop, which helps reduce power losses and is ideal for applications such as capacitor discharge.The SBRT10U50SP5-13D uses a low-forward diode structure to reduce power dissipation. It is made up of a p-type substrate, a layer of doped silicon, and an i-type layer. The p-type substrate has a lower band gap than the i-type layer, which causes holes to form in the p-type substrate. The doped silicon layer has more holes, allowing electrons to move freely between the two layers. This is what allows the diode to conduct currents when the voltage is high and prevents it from conducting when the voltage is low.Conclusion
The SBRT10U50SP5-13D is a rectifier diode which has a number of features that make it suitable for applications where rectification is critical. It has a very low forward voltage drop, no need for additional heat sinking, and is capable of handling large currents with very little power dissipation. As such, it is widely used in computer system power regulation circuits, power supplies, and other industries for AC and DC rectification, as well as for protection from surges. The diode works by using a small space charge to convert AC into DC, and it is made up of a p-type substrate, a layer of doped silicon, and an i-type layer, which allow for current to flow when the voltage is high and prevent it from flowing when the voltage is low.The specific data is subject to PDF, and the above content is for reference
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