SBRT3U60SAF-13 Allicdata Electronics
Allicdata Part #:

SBRT3U60SAF-13DITR-ND

Manufacturer Part#:

SBRT3U60SAF-13

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE SBR SMAF
More Detail: Diode Super Barrier 60V 3A Surface Mount SMAF
DataSheet: SBRT3U60SAF-13 datasheetSBRT3U60SAF-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.08843
30000 +: $ 0.08111
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: Automotive, AEC-Q101, SBR®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The SBRT3U60SAF-13 is a state-of-the-art diode rectifier that is used in various applications. It is a single diode rectifier and is designed to meet the stringent requirements of high-speed sampling and rapid current regulation. The SBRT3U60SAF-13 is designed to provide a low forward voltage drop, reliable operation over a wide range of temperatures, and exceptional current regulation at high frequencies.

The SBRT3U60SAF-13 is commonly used in power supply and voltage regulator applications, as well as in low noise wireless communications. It is ideal for circuit designs including high frequency switch-mode power supplies, as well as switching regulators and DC-to-DC converters. The SBRT3U60SAF-13 can also be used as a high-speed rectifying diode for power supplies, voltage converters, and low noise TV and radio circuits.

The SBRT3U60SAF-13 is designed to work over the temperature range of -55 degrees to +150 degrees Celsius. This allows it to be used in a wide range of applications, including automotive and industrial settings, and it is also suitable for use in harsh environments. In addition, the SBRT3U60SAF-13 is designed to operate at high temperatures and voltages, making it capable of handling large current levels.

The SBRT3U60SAF-13 utilizes a single diode structure to help reduce the amount of losses associated with rectification. This is important, as losses can reduce the efficiency of a power supply and affect the performance of the system. In addition, the single diode structure of the SBRT3U60SAF-13 helps reduce the size and weight of the device, further improving system performance.

The working principles of the SBRT3U60SAF-13 can be summarized as follows. The device uses an N-type structure that acts as the anode, while the P-type structure works as the cathode. When the device is forward biased, electrons are injected from the anode into the P-type region around the cathode. At the same time, holes are injected from the cathode into the N-type region, creating a positive potential difference between the terminals and allowing current to flow.

When the voltage on the device terminates, the charge carriers recombine and the device enters the blocking mode. In the blocking mode, the depletion region between the P-type and N-type regions widens and the device acts as an open switch, preventing any current from flowing through the device. This helps protect the circuit and other components from unwanted current.

In summary, the SBRT3U60SAF-13 is a single diode rectifier with a wide range of applications, from low noise wireless communications to high power applications. It utilizes a single diode structure to minimize the losses associated with rectification and can be used in a wide range of temperatures. In addition, it is designed with a high frequency capability and low forward voltage drop for reliable operation in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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