Allicdata Part #: | 1655-1558-2-ND |
Manufacturer Part#: |
SDURB860TR |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | SMC Diode Solutions |
Short Description: | DIODE GEN PURP 600V D2PAK |
More Detail: | Diode Standard 600V Surface Mount D2PAK |
DataSheet: | SDURB860TR Datasheet/PDF |
Quantity: | 800 |
800 +: | $ 0.19072 |
1600 +: | $ 0.17437 |
2400 +: | $ 0.15802 |
5600 +: | $ 0.14712 |
20000 +: | $ 0.14531 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | -- |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 8µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The SDURB860TR is a new type of diodes that is used for rectification and employs a single dielectric. The device is designed to convert AC power to DC power, a process commonly known as rectification. It can be used in a wide range of applications, including voltage regulation, power supply, audio and video systems, telecommunications, automotive and aerospace. The SDURB860TR operates on a Principle of Rectifier or P-Con. This principle states that a rectifier should be able to convert AC power to DC power without the addition of any external components. This device is capable of providing very high output power, with little or no ripple or noise.
The SDURB860TR features a unique metal-oxide semiconductor (MOS), with a single rectifying diode. The diode is typically coupled with a transistor, which is used as an auxiliary driver. This allows the device to provide a high output power with a low output impedance. The device also has a good voltage coefficient resulting in excellent EMI performance. The SDURB860TR comes with its own proprietary gate drive circuit, which ensures that the correct amount of current is supplied to the gate before the turn off of the switching transistor.
The SDURB860TR is quite versatile in terms of its applications. It is used in many applications in the electronics and power supply industry. It is suitable for power supplies in industrial and automotive applications, including voltage regulation and voltage measurement. The SDURB860TR is also used in audio and video equipment and telecommunications applications. The device is also suitable for use in aerospace and medical applications.
In terms of its working principle, the gate of the output transistor is driven by the gate driver circuit. This allows the gate to switch on or off depending on a particular signal. The gate driver is also coupled with a sense resistor which measures the voltage across the output. This voltage measurement is referred to as the "sensing" and it allows the gate drive circuit to provide the correct amount of power to the gate. Once the correct voltage is attained, the gate will turn on or off to provide the appropriate amount of power for the device.
The low-level gate drive of the SDURB860TR allows for a wide range of applications. This device is suitable for many applications in the automotive and aerospace industry, such as fuel cell applications and battery management systems. It is also used in power supplies for medical and telecommunications applications. For medical applications, the SDURB860TR is used for in-vitro diagnostics, such as blood pressure readings. In the telecommunications industry, the device is used in the radio frequency (RF) equipment and cable television systems.
The SDURB860TR is a versatile device that can be used in a variety of different applications. It features a unique MOS structure with a single rectifying diode, allowing for excellent voltage regulation and EMI performance. The device also features its own proprietary gate drive circuit, which ensures that the correct amount of power is supplied to the gate before the turn off of the switching transistor. This feature makes the device suitable for use in a wide range of applications, including industrial, automotive and aerospace applications.
The specific data is subject to PDF, and the above content is for reference
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SDUR1020 | SMC Diode So... | 0.47 $ | 1000 | DIODE GEN PURP 200V TO220... |
SDURF1020 | SMC Diode So... | 0.47 $ | 1000 | DIODE GEN PURP 200V ITO22... |
SDUR1030 | SMC Diode So... | 0.48 $ | 950 | DIODE GEN PURP 300V TO220... |
SDURF1040 | SMC Diode So... | 0.48 $ | 990 | DIODE GEN PURP 400V ITO22... |
SDUR1040 | SMC Diode So... | 0.48 $ | 997 | DIODE GEN PURP 400V TO220... |
SDURF1030 | SMC Diode So... | 0.48 $ | 978 | DIODE GEN PURP 300V ITO22... |
SDUR1060 | SMC Diode So... | 0.5 $ | 1000 | DIODE GEN PURP 600V TO220... |
SDUR860 | SMC Diode So... | 0.5 $ | 1000 | DIODE GEN PURP 600V TO220... |
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