SE20PABHM3/I Allicdata Electronics
Allicdata Part #:

SE20PABHM3/I-ND

Manufacturer Part#:

SE20PABHM3/I

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 100V 1.6A DO220AA
More Detail: Diode Standard 100V 1.6A Surface Mount DO-220AA (S...
DataSheet: SE20PABHM3/I datasheetSE20PABHM3/I Datasheet/PDF
Quantity: 1000
14000 +: $ 0.06522
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: Automotive, AEC-Q101, eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Diodes - Rectifiers - Single is a type of diode consisting of a single layer of p-type semiconductor placed between two n-type semiconductors. Included in this category are SE20PABHM3/I diodes. The SE20PABHM3/I is a PIN diode with a maximum reverse voltage of 200V, a forward current of 20A, a maximum current of 250mA, and an operating temperature range of -55°C to -50°C. It has a maximum reverse current of 0.1mΩ and a forward voltage drop of 0.75V.

The SE20PABHM3/I is ideally suited for applications where high speed switching is required. This makes it suitable for applications such as power supplies, motor controls, instrumentation, and lighting control. As a PIN diode, it is also suitable for high frequency switching in signal processing applications.

The working principle of the SE20PABHM3/I is based on the basic principle of semiconductor diode operation. Once forward-biased, current will start to flow through the diode. The amount of current flowing depends on the amount of forward bias applied to the junction. As the current increases, the voltage across the junction will drop.

In addition to the basic principle of operation, the SE20PABHM3/I also utilizes an intrinsic layer of the PIN diode. The purpose of the intrinsic layer is to reduce conductance when exposed to an electric field. This helps to reduce switching times and helps to increase the circuit’s switching frequency.

The SE20PABHM3/I is also a good choice for RF diode applications. Its fast switching capabilities make it especially well-suited for use in radio frequency detectors, mixers, and amplifiers. In addition, its low noise characteristics make it a good choice for applications such as analog-to-digital converter input stages and digital-to-analog converter output stages.

Overall, the SE20PABHM3/I diode is a well-rounded device suitable for a wide variety of RF applications. Its fast switching capabilities make it an ideal choice for high frequency switching. In addition, its intrinsic layer helps to reduce switching times and momentarily increase circuit switching frequencies. Lastly, its low noise characteristics make it suitable for both analog and digital applications.

The specific data is subject to PDF, and the above content is for reference

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