
Allicdata Part #: | SE20PABHM3/I-ND |
Manufacturer Part#: |
SE20PABHM3/I |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1.6A DO220AA |
More Detail: | Diode Standard 100V 1.6A Surface Mount DO-220AA (S... |
DataSheet: | ![]() |
Quantity: | 1000 |
14000 +: | $ 0.06522 |
Series: | Automotive, AEC-Q101, eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1.6A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 13pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-220AA |
Supplier Device Package: | DO-220AA (SMP) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes - Rectifiers - Single is a type of diode consisting of a single layer of p-type semiconductor placed between two n-type semiconductors. Included in this category are SE20PABHM3/I diodes. The SE20PABHM3/I is a PIN diode with a maximum reverse voltage of 200V, a forward current of 20A, a maximum current of 250mA, and an operating temperature range of -55°C to -50°C. It has a maximum reverse current of 0.1mΩ and a forward voltage drop of 0.75V.
The SE20PABHM3/I is ideally suited for applications where high speed switching is required. This makes it suitable for applications such as power supplies, motor controls, instrumentation, and lighting control. As a PIN diode, it is also suitable for high frequency switching in signal processing applications.
The working principle of the SE20PABHM3/I is based on the basic principle of semiconductor diode operation. Once forward-biased, current will start to flow through the diode. The amount of current flowing depends on the amount of forward bias applied to the junction. As the current increases, the voltage across the junction will drop.
In addition to the basic principle of operation, the SE20PABHM3/I also utilizes an intrinsic layer of the PIN diode. The purpose of the intrinsic layer is to reduce conductance when exposed to an electric field. This helps to reduce switching times and helps to increase the circuit’s switching frequency.
The SE20PABHM3/I is also a good choice for RF diode applications. Its fast switching capabilities make it especially well-suited for use in radio frequency detectors, mixers, and amplifiers. In addition, its low noise characteristics make it a good choice for applications such as analog-to-digital converter input stages and digital-to-analog converter output stages.
Overall, the SE20PABHM3/I diode is a well-rounded device suitable for a wide variety of RF applications. Its fast switching capabilities make it an ideal choice for high frequency switching. In addition, its intrinsic layer helps to reduce switching times and momentarily increase circuit switching frequencies. Lastly, its low noise characteristics make it suitable for both analog and digital applications.
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SE20FJHM3/H | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1.7A ... |
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SE20AFDHM3/6A | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1.3A ... |
SE200P-TR0 | Panduit Corp | 555.81 $ | 1000 | SLEEVING 2" X 200' BLACK |
SE20PD-M3/84A | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1.6A ... |
SE20PJHM3/85A | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1.6A ... |
SE20PJ-M3/85A | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1.6A ... |
SE20DGHM3/I | Vishay Semic... | 0.38 $ | 1000 | DIODE GEN PURP 400V 3.9A ... |
SE20AFGHM3/6B | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1.3A ... |
SE20PABHM3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1.6A ... |
SE20PAJ-M3/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1.6A ... |
SE20AFJHM3/6B | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1.3A ... |
FI-SE20P-HFE | JAE Electron... | 3.42 $ | 23536 | CONN RCPT 1.25MM 20POS SM... |
SE20DD-M3/I | Vishay Semic... | 0.36 $ | 1000 | DIODE GEN PURP 200V 3.9A ... |
SE20FJ-M3/H | Vishay Semic... | 0.07 $ | 6000 | DIODE GEN PURP 600V 1.7A ... |
SE20PAG-M3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1.6A ... |
SE20PADHM3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1.6A ... |
SE20AFJHM3/6A | Vishay Semic... | -- | 45500 | DIODE GEN PURP 600V 2A DO... |
SE20B2480 | Leader Tech ... | 24.06 $ | 1000 | FERRITE CLAMP 52MM X 1.50... |
SE20PDHM3/85A | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1.6A ... |
SYSMAC-SE203L | Omron Automa... | 4.16 $ | 1000 | SYSMAC STUDIO 3USR LICNS ... |
SE20FJHM3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1.7A ... |
SE20PBHM3/84A | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1.6A ... |
SE20FD-M3/H | Vishay Semic... | 0.07 $ | 12000 | DIODE GEN PURP 200V 1.7A ... |
SE20FDHM3/H | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1.7A ... |
SE20PAJHM3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1.6A ... |
SE20PBHM3/85A | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1.6A ... |
SE20AFD-M3/6B | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1.3A ... |
SE20DJHM3/I | Vishay Semic... | 0.38 $ | 1000 | DIODE GEN PURP 600V 3.9A ... |
SE20AFBHM3/6B | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1.3A ... |
SE20FGHM3/H | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1.7A ... |
BB-SE208 | B&B Smar... | 82.47 $ | 8 | NETWORK SWITCH-UNMANAGED ... |
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