
Allicdata Part #: | SE20PAGHM3/I-ND |
Manufacturer Part#: |
SE20PAGHM3/I |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1.6A DO220AA |
More Detail: | Diode Standard 400V 1.6A Surface Mount DO-220AA (S... |
DataSheet: | ![]() |
Quantity: | 1000 |
14000 +: | $ 0.06522 |
Series: | Automotive, AEC-Q101, eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1.6A |
Voltage - Forward (Vf) (Max) @ If: | 1.05V @ 2A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 13pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-220AA |
Supplier Device Package: | DO-220AA (SMP) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The SE20PAGHM3/I is a rectifier designed for high current unidirectional applications, such as a battery charger, ac/dc adapter, or power-supply. The device is composed of a single N-channel MOSFET with a low voltage, high-frequency design, making it ideal for applications requiring both high power conversion rates and high efficiency. It is capable of operating with currents up to 20A and with voltages up to 40V. Additionally, the device has a low gate-source capacitance, which allows the device to be used in high-frequency applications.
The SE20PAGHM3/I\'s main advantages include its high-current handling capability, low voltage loss, and low gate-source capacitance. Additionally, the device is designed for low-noise operation, making it suitable for applications where noise must be kept to a minimum. Another feature of the SE20PAGHM3/I is its built-in diodes, which provide protection from overvoltage and overcurrent conditions. This is especially useful in power-supply applications where voltage spikes can damage components.
The SE20PAGHM3/I employs a modified full-bridge architecture, which is a popular topology in high current and low voltage applications. In this design, the MOSFETs in the bridge are connected in series, with the gate-source capacitances of the transistors being kept low to reduce switching losses. This design also allows the device to have a wide operating range, with input voltages up to 40V andoutput currents up to 20A. The rectifier can also operate at high frequencies, up to 20 MHz.
The working principle of the SE20PAGHM3/I is to utilize the capacitance between its MOSFETs to store energy from the incoming signal and release it as a regulated current to the output. This energy-storing mechanism affords the device its high frequency operation and high current output. The device is also capable of soft-switching, which means that the voltage conditions at the input and output are controlled to switch the device without creating excessive stress on the MOSFETs. Additionally, the rectifier has built-in protection features, including overvoltage and overcurrent protection.
The SE20PAGHM3/I is a highly efficient and reliable rectifier, suitable for a wide variety of applications. Its high frequency, low voltage loss, and high current handling ability make it an ideal choice for power-supply, battery charger, and ac/dc adapter applications. Additionally, the device has built-in protection features and is capable of soft-switching, providing enhanced reliability to sensitive circuitry. In conclusion, the SE20PAGHM3/I is a versatile, high-performance rectifier perfect for high current unidirectional applications.
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SE200P-TR0 | Panduit Corp | 555.81 $ | 1000 | SLEEVING 2" X 200' BLACK |
SE20PD-M3/84A | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1.6A ... |
SE20PJHM3/85A | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1.6A ... |
SE20PJ-M3/85A | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1.6A ... |
SE20DGHM3/I | Vishay Semic... | 0.38 $ | 1000 | DIODE GEN PURP 400V 3.9A ... |
SE20AFGHM3/6B | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1.3A ... |
SE20PABHM3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1.6A ... |
SE20PAJ-M3/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1.6A ... |
SE20AFJHM3/6B | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1.3A ... |
FI-SE20P-HFE | JAE Electron... | 3.42 $ | 23536 | CONN RCPT 1.25MM 20POS SM... |
SE20DD-M3/I | Vishay Semic... | 0.36 $ | 1000 | DIODE GEN PURP 200V 3.9A ... |
SE20FJ-M3/H | Vishay Semic... | 0.07 $ | 6000 | DIODE GEN PURP 600V 1.7A ... |
SE20PAG-M3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1.6A ... |
SE20PADHM3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1.6A ... |
SE20AFJHM3/6A | Vishay Semic... | -- | 45500 | DIODE GEN PURP 600V 2A DO... |
SE20B2480 | Leader Tech ... | 24.06 $ | 1000 | FERRITE CLAMP 52MM X 1.50... |
SE20PDHM3/85A | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1.6A ... |
SYSMAC-SE203L | Omron Automa... | 4.16 $ | 1000 | SYSMAC STUDIO 3USR LICNS ... |
SE20FJHM3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1.7A ... |
SE20PBHM3/84A | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1.6A ... |
SE20FD-M3/H | Vishay Semic... | 0.07 $ | 12000 | DIODE GEN PURP 200V 1.7A ... |
SE20FDHM3/H | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1.7A ... |
SE20PAJHM3/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1.6A ... |
SE20PBHM3/85A | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1.6A ... |
SE20AFD-M3/6B | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1.3A ... |
SE20DJHM3/I | Vishay Semic... | 0.38 $ | 1000 | DIODE GEN PURP 600V 3.9A ... |
SE20AFBHM3/6B | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1.3A ... |
SE20FGHM3/H | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1.7A ... |
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