SE50PAGHM3/I

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The SE50PAGH-M3/I rectifier diode is a high-performance device commonly used in power supplies and other circuit applications. It is required to have very low forward voltage drop and minimal dynamic power loss. It also has a high junction temperature rating up to 175̊C and provides excellent Schottky gate performance with reverse breakdown voltages as low as 16V.

The SE50PAGH-M3/I rectifier diode consists of a substrate, a doping medium, an ohmic contact, and a surface treatment. The substrate material used is silicon with a doping medium of phosphorus and boron, providing a significant reduction in forward voltage drop compared to standard rectifier diodes. The ohmic contact is a P type, which provides good adhesion for a low forward voltage drop and schottky voltage. A surface treatment of gold has been applied to the diode in order to increase gate performance and reverse breakdown voltage.

The SE50PAGH-M3/I rectifier diode has a wide range of application areas. It is commonly used in power supplies as a voltage regulator, allowing for the regulation of large currents and high voltages. It is also used in rectifiers to convert AC current to DC current for power conversion and the protection of electronic components. Additionally, the diode can be found in rectifier bridges, full-wave rectifiers, and power factor correction circuits.

The working principle of the SE50PAGH-M3/I rectifier diode is based on the rectifying effect. When the diode is forward biased, the voltage drop across it is very low and current flows through the diode. However, when the diode is reverse biased, the voltage drop across it is very high and no current flows. This principle is used in rectifiers to convert AC power to DC power for various applications.

The SE50PAGH-M3/I rectifier diode is a high-performance, cost-effective device capable of reliably regulating high voltages and currents. Its high junction temperature rating and excellent gate performance make it suitable for a wide range of power supply and circuit applications. With its wide range of applications, the SE50PAGH-M3/I diode has become a staple in the power electronics industry.

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