SE5511T-R RF/IF and RFID

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SE5511T-R is part of NXP’s RF Front End (RFFE) family of products, designed for mobile broadband and wireless communications applications. Specifically, the SE5511T-R is a gallium arsenide (GaAs) high dynamic range (HDR) receiver that is ideal for use in 4G Long-Term-Evolution (LTE) devices. The SE5511T-R is a single chip, low-noise amplifier and power amplifier (LNA + PA) combination, which provides reliable performance in 4G and future 5G applications.

At the heart of the SE5511T-R RFFE is its unique, high dynamic range (HDR) architecture, which provides exceptional linearity performance under wide dynamic range conditions. It is this architecture that makes the SE5511T-R ideal for modern LTE and future 5G applications. As a RF front end, the SE5511T-R is also integrated with a low-noise amplifier (LNA), enabling it to amplify input signals and reject interfering signals. The power amplifier (PA) is also integrated, allowing it to transmit the amplified signal efficiently and without distortion.

The SE5511T-R has wide dynamic range performance, from -8dBm up to +44dBm, and it has an extended frequency range of 700 to 2600MHz. The LNA’s input impedance and the PA’s output impedance are both 50Ω, making it well suited for use in systems designed to operate in accordance with LTE and equivalent standards. The SE5511T-R also provides a large input signal dynamic range (more than 80dB) and low current consumption of 839m W (typical).

The SE5511T-R has been designed with integrated power control and monitoring features. It supports auto power control (APC) and receive signal strength indicator (RSSI) functions, which enable it to be used in highly demanding, fast-changing applications. It also supports a variety of digital controls which allow it to be adjusted and monitored by the host application processor.

The SE5511T-R also offers multiple protection features. To ensure that the RF front end functions correctly in harsh RF environments, it has built in protection circuits that will shut down the LNA and PA in the event of over current or over temperature conditions. The device also incorporates an ESD (electrostatic discharge) protection circuit. In addition, the SE5511T-R comes with a variety of monitor and control pins for monitoring the device\'s status at all times.

Overall, the SE5511T-R is an excellent solution for mobile broadband and wireless communications applications. With its high dynamic range performance, wide frequency range, low current consumption, integrated power control features, and protection circuits, the SE5511T-R is well suited for the most demanding LTE and 5G applications. It is a reliable and cost-effective solution for LTE, WiMAX, and other RF front end applications.

The specific data is subject to PDF, and the above content is for reference