SF25H100

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The SF25H100 is a silicon nitride based electric field sensor that is suitable for applications in a wide range of industries. This sensor is designed for use in monitoring and measuring applications where electrostatic or localized electric fields need to be monitored in real-time. The sensor can be used to measure the intensity, distribution, and direction of electric fields and is commonly used in medical, aerospace, defense, and industrial applications.

The basic components of the SF25H100 are a high quality chip which is encapsulated in a robust metal shield, a power source, an amplifier, and the sensing element. The sensor chip includes a sophisticated set of transducers, amplifiers, and comparators which convert electric fields into a voltage signal. The signal is then amplified and digital values are passed to the host interface through an I2C interface. The SF25H100 has a wide range of input voltage ranges, from +100V to -100V, and it can also measure fields up to 5kV/m.

The SF25H100 uses a highly sensitive silicon nitride dielectric layer to detect electric fields. This layer has a very high dielectric constant and is extremely efficient at converting electric fields to voltage outputs. As the electric field changes, the dielectric layer changes its capacitance and consequently changes the voltage output. This output is collected by the onboard amplifier and passed on to the host interface. The sensor components are housed in a metal shield which helps to protect it from external damage and interference.

The SF25H100 is highly flexible and can be used for many different types of applications. It can be used in medical applications to measure electric fields produced by the body, for example in electrocardiograms (ECG), in defense and aerospace applications to measure localized electric fields, or in industrial applications to detect and measure electric fields in hazardous or high risk environments.

The SF25H100 is a highly reliable and accurate sensor that is suited for many different applications. It has a wide input range and can measure up to 5kV/m. The highly sensitive silicon nitride layer is efficient at converting electric fields to voltage outputs and the metal shield provides protection from external damage and interference. This sensor is an excellent choice for applications in medical, aerospace, defense, and industrial fields.

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