STK22C48-SF25TR

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STK22C48-SF25TR is a high-speed, low-power static random access memory (SRAM) device. The device are organized as 2,097,152 words by 16 bits, requiring 21 address pins for memory selection. The device are designed for use in applications that require large capacity of static random access memory, such as computer systems, video base stations, and cellular phones.

STK22C48-SF25TR includes a 32Byte wide data buffer that allows byte, half-word and word accesses with access time of 25ns. The device offers a range of operating voltages and with built in power and signal direction control. It also provides a comprehensive functional bar in the data buffer, program cache and then bus interface mode.

STK22C48-SF25TR is a non-volatile static random access memory device, normally polarized, meaning it is rated for only one polarity of applied voltage added over the years. When an external voltage is applied, an electric field appears in the domain of the dielectric layer between the two electrode, which causes electric charges to move and stabilize the electric fields in the opposite direction.

The basic working principle of the STK22C48-SF25TR is based on the charge storing mechanism: the charge moves within the dielectric layer for the formation of electric fields, read and write operations be achieved. It stores data by trapping the charge in the dielectric layer, called cell, through applying a voltage from the x plate to the y plate, by means of the write operation. The charge trapped in the dielectric layer represents the electrical state of "1" or "0", depending on the amount of voltage applied.

STK22C48-SF25TR device is integrated with a 7-bit decoder circuit to reduce the number of pins required to control the individual cell in an array. In addition, this device includes a 32Byte wide data buffer that increases the data access window, allowing byte, half-word and word accesses with access time of 25ns.

STK22C48-SF25TR can be used in a wide variety of applications, such as computer systems, video base stations, and cellular phones. It provides high capacity, long-term dependable data storage, and provides high-speed access for time-critical applications. It is necessary for portable electronics, embedded systems, and other applications. The SRAM devices can be used to replace DRAM devices such as EDO DRAM and SDRAM, allowing more efficient and reliable memory usage.

In conclusion, STK22C48-SF25TR is an optimal solution for a wide range of applications requiring high capacity, low power and fast access time. Its charge storing mechanism works reliably and efficiently, enabling fast data access and memory protection. The device is suitable for use in embedded systems, portable electronics and other applications, providing dependable and reliable data storage.

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