| Allicdata Part #: | SI6544BDQ-T1-E3TR-ND |
| Manufacturer Part#: |
SI6544BDQ-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N/P-CH 30V 3.7A 8-TSSOP |
| More Detail: | Mosfet Array N and P-Channel 30V 3.7A, 3.8A 830mW ... |
| DataSheet: | SI6544BDQ-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Base Part Number: | SI6544 |
| Supplier Device Package: | 8-TSSOP |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 830mW |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 43 mOhm @ 3.8A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.7A, 3.8A |
| Drain to Source Voltage (Vdss): | 30V |
| FET Feature: | Logic Level Gate |
| FET Type: | N and P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SI6544BDQ-T1-E3 is an advanced power field-effect transistor (FET) array designed for use in many applications such as switching, power supply control, power amplification, and other applications. The device is constructed in a versatile monolithic package and combines four N-Channel and four P-Channel MOSFET transistors. This FET array has an integrated thermal protection circuit, low gate-drain charge, and low gate resistance, making it ideal for a variety of digital control applications.
The SI6544BDQ-T1-E3 is a 4x4 power FET array for low voltage applications. It offers a low voltage drop and low on-resistance. The device features four N-channel and four P-channel MOSFETs in a low footprint package. This FET array is ideal for use in applications such as load switches, motor control, and a variety of other low voltage applications. The device features on-state and thermal protection. The integrated thermal protection helps protect the device from damage due to over-temperature conditions. The device also features an adjustable slew rate, which is ideal for optimizing performance in low noise applications.
The operation of the SI6544BDQ-T1-E3 is based on the field-effect transistor (FET) principle. It uses an electric field to control the movement of electrons around a semiconductor material. This field is created by an insulated metal oxide gate above the semiconductor material and acts like a valve, allowing electrons to flow through the material or preventing them from doing so. The voltage applied to the gate of the FET controls the flow of electrons, which enables it to be used as a switch, amplifier, or other logic device.
The SI6544BDQ-T1-E3 is an ideal choice for a variety of applications due to its low voltage drop and low on-resistance. It is ideal for load switches, motor control, and other low voltage applications. Its integrated thermal protection and adjustable slew rate makes the device an excellent choice for noise sensitive applications. This FET array is a great solution for many applications requiring reliable power and performance.
The specific data is subject to PDF, and the above content is for reference
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SI6544BDQ-T1-E3 Datasheet/PDF