Allicdata Part #: | SI6562CDQ-T1-GE3TR-ND |
Manufacturer Part#: |
SI6562CDQ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V 6.7A 8-TSSOP |
More Detail: | Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, ... |
DataSheet: | SI6562CDQ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Base Part Number: | SI6562 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.6W, 1.7W |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 5.7A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.7A, 6.1A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI6562CDQ-T1-GE3 is an Array of Personal System Interconnect (PSI) ESD protection transistors that help to protect high speed busses operating at speeds of up to 10 Gbps. It is a four-level cascode package with an integrated ESD protection device. The SI6562CDQ-T1-GE3 is ideal for applications such as automotive, consumer, and industrial communication interface applications where ESD protection is an important design consideration.
The SI6562CDQ-T1-GE3 is a compact, effective and easy-to-use transistors array chip specifically designed for ESD protection. It is available in an easy-to-use four lead SOT-223 package. The four pins include Gate, Source, Drain, and ESD Protection. The device provides ESD protection for the sensitive pins of communication interface components, ensuring reliable operation by preventing ESD damage. It has an integrated substrate connection that provides a low-impedance connection to earth. This reduces the effect of ESD pulses on the substrate.
The SI6562CDQ-T1-GE3 is designed to work with a variety of ESD pulses, including Common Mode ESD, Contact Discharge and Human Body Model test pulses. It provides extremely low ESD clamp voltage, minimal power dissipation and low leakage current, making it an ideal solution for high-speed communication applications. The SI6562CDQ-T1-GE3 can be used in a variety of communication interface applications, including USB and I2C, as well as other digital and analog signals.
The working principle of the SI6562CDQ-T1-GE3 transistors is relatively simple. In the off state, the gate is pulled high, which prevents current flow from the drain to the source. When an ESD pulse is applied, the gate voltage drops, allowing current to flow from the source to the drain and providing ESD protection. The device can be used as both a stand-alone ESD protection device, or it can be used in conjunction with other ESD protection components, such as diodes or TVS chips, to provide comprehensive ESD protection for the sensitive pins of communication interface components.
In summary, the SI6562CDQ-T1-GE3 transistors are an ideal solution for ESD protection in high-speed communication interfaces. This device provides excellent ESD protection from various types of ESD pulses and also offers low power consumption and low leakage current. The SI6562CDQ-T1-GE3 is available in a convenient four lead SOT-223 package and is perfect for protecting sensitive pins of communication interface components in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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