SI6562DQ-T1-E3

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SI6562DQ-T1-E3, a N-channel power MOSFET from Vishay Intertechnology, has been designed for particular applications in power electronics. The device is a logic-level device with an on-state resistance of 4 milliOhms in the SOT-223 package. SI6562DQ-T1-E3, which consists of N-channel MOSFETs connected in parallel, can thus be used in switching, rectifying and boosting applications.

The working principle of SI6562DQ-T1-E3 is a relatively simple one. The N-channel MOSFETs are connected in parallel; i.e. the drains and sources of each MOSFET are connected to one another. When a low power logic signal or gate voltage is applied to the Gates, the MOSFETs will turn on and start conducting due to the fact that the voltage on their respective drain and source is of opposite polarities, thus creating a current path from drain to source.

The SI6562DQ-T1-E3 array is mainly used as a switching device, mainly in applications that require low-level power switching up to a maximum of 12A. It can be used in applications such as switching Charge Pumps, DC-DC converters, high side switches, and low side protection switches, among others. Additionally, it can also be used in boost converters and clamping applications.

The SI6562DQ-T1-E3’s low on-state resistance of 4 milliOhms is what allows for efficient power switching performance at a relatively low voltage. This makes it ideal for switching applications that demand low power consumption, such as battery powered devices.

In addition to its low power consumption, this device also features an integrated ESD protection, thermal shutdown protection and an active positive temperature coefficient (PTC) protection against short-circuits. This additional protection ensures that the device can handle its maximum current rating of 12A and ensures a long reliable service life for the device.

The SI6562DQ-T1-E3 is mainly used in applications where low-level power switching and high current switching performance is required. It is also used in various rectifying, boosting and clamping applications due to its low on-state resistance and integrated protection features. The device can handle up to 12A of peak current, which makes it ideal for a variety of applications.

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