SI7501DN-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7501DN-T1-E3CT-ND

Manufacturer Part#:

SI7501DN-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 30V 5.4A 1212-8
More Detail: Mosfet Array N and P-Channel, Common Drain 30V 5.4...
DataSheet: SI7501DN-T1-E3 datasheetSI7501DN-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI7501
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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Transistors are essential components in a wide array of modern circuits and have enabled devices to be built that can perform complex tasks with a very high degree of accuracy. The SI7501DN-T1-E3 is a modern transistor array which is designed to make use of array support to enable a wide range of applications. In this article, the application field and working principle of the SI7501DN-T1-E3 array will be outlined, giving readers an understanding of the capabilities of this powerful transistor array.

Application Field of the SI7501DN-T1-E3

The SI7501DN-T1-E3 is an array of transistors which is designed for applications requiring high speed switching, low power-dissipation, and multi-channel operation. This array supports very high data rate switching and a fast response time, making it ideal for applications requiring a high degree of accuracy and speed. Some of the applications of the SI7501DN-T1-E3 include power management, data transmission and storage, modulation, communications, and control. The array is also well-suited to applications in consumer electronics, automotive, and industrial systems.

Working Principle

The SI7501DN-T1-E3 is a three-channel MOSFET array. It is constructed of three N-channel vertical DMOS transistors with a combination of planar passivation and silicided contact regions. This MOSFET array is designed with very low on-resistance and a low gate-to-source capacitance, allowing for very fast switching speeds. The array is designed to operate at wavelengths as low as 0.85V, making it suitable for low voltage applications. Additionally, it supports very low current flows, allowing for very energy efficient operation.

The SI7501DN-T1-E3\'s three channels are connected together and each channel is individually optically isolated. This allows information to travel between the channels without being directly connected. This isolated design increases system reliability, reduces errors, and allows for correct functioning of the system at high speeds. Additionally, the array incorporates various protection features such as UVLO (Under-Voltage Lock-Out) and inrush current protection to ensure reliable system operation.

The SI7501DN-T1-E3 is an array of transistors with a wide range of applications. Its high-speed switching capabilities, low power dissipation requirements, and three channel design makes it perfect for applications requiring accurate, fast operation. With its numerous protective features and isolated channels, the array offers a high degree of system reliability and is suitable for operation in a wide range of applications including power management, data transmission and storage, modulation, communications, and control. It is an important component in many modern systems and can be used to build devices capable of performing complex tasks with a high degree of accuracy.

The specific data is subject to PDF, and the above content is for reference

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