SI7540ADP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7540ADP-T1-GE3TR-ND

Manufacturer Part#:

SI7540ADP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH POWERPAK8
More Detail: Mosfet Array N and P-Channel 20V 12A, 9A 3.5W Surf...
DataSheet: SI7540ADP-T1-GE3 datasheetSI7540ADP-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: --
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A, 9A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
Power - Max: 3.5W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7540ADP-T1-GE3 is a series of field effect transistors designed for IoT applications. It is an array type FET, meaning it consists of several individual transistors integrated into one package for convenience and improved performance. This type of FET is commonly used in short-range digital communications, smart meters, and other IoT devices. The SI7540ADP-T1-GE3 is a fairly low-power device, making it well-suited to a variety of devices that require minimal power consumption.

Working Principle

The SI7540ADP-T1-GE3 is a Junction Field-Effect Array (JFET) transistor. It operates on the principle of controlling and regulating the flow of electrical current between two points. The transistor is composed of two distinct pieces; the Source and the Drain. When the source (input) is charged up with a voltage, the current flows from the source, through the transistor, to the drain (output). The Gate of the transistor has a voltage input as well, and the application of this voltage changes the character of any current flowing between the Source and Drain, allowing for the transistor to be used as a switch, amplifier, or for other similar applications.

The voltage of the Gate is controlled through a number of different methods, depending on the type of FET. For this particular device, the Gate is controlled through the application of an appropriate voltage threshold (typically 1.8V). This voltage threshold is key in the device’s effective operation; if the threshold is missed, the Gate’s voltage will be unable to open itself and control any current flowing between Source and Drain, leading to a shut-down of the device.

Applications

Due to its low-power requirements and size, the SI7540ADP-T1-GE3 is commonly used in IoT applications. As a JFET transistor, it can perform basic digital logic, making it well-suited to low-power sensing and control applications. With multiple gates and sources, it can be used to manage multiple signals simultaneously. This makes it useful in short-range digital communication, where multiple instructions need to be managed in a very short amount of time. Additionally, due to its small size and power requirements, it is a popular choice for smart meter applications and other low-power IoT devices.

Another popular application for the SI7540ADP-T1-GE3 transistor is as a switch. By applying the appropriate Gate voltage, it is possible to turn the transistor on and off, allowing for more intricate control and sensing applications. Additionally, it can be used in amplifier applications as well; by carefully modulating the input voltage applied to the Gate, it is possible to create an amplified output signal.

Conclusion

The SI7540ADP-T1-GE3 is a low-power JFET array transistor designed for use in IoT applications. It is capable of basic digital logic and switching, making it well-suited for short-range communications and smart meters. It is also a popular choice for other low-power IoT applications, such as sensing and amplification. Due to its size and power requirements, the SI7540ADP-T1-GE3 is a highly versatile and efficient transistor, making it an ideal choice for a variety of different projects.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI75" Included word is 7
Part Number Manufacturer Price Quantity Description
SI7501DN-T1-E3 Vishay Silic... -- 1000 MOSFET N/P-CH 30V 5.4A 12...
SI7530DP-T1-E3 Vishay Silic... -- 1000 MOSFET N/P-CH 60V 3A PPAK...
SI7540DP-T1-E3 Vishay Silic... -- 1000 MOSFET N/P-CH 12V 7.6A PP...
SI7501DN-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N/P-CH 30V 5.4A 12...
SI7540DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N/P-CH 12V 7.6A PP...
SI750X3 Belden Inc. 18.07 $ 1000 2 PIECE X SERIES SPLICE C...
SI7540ADP-T1-GE3 Vishay Silic... -- 1000 MOSFET N/P-CH POWERPAK8Mo...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics