| Allicdata Part #: | SI7540DP-T1-E3TR-ND |
| Manufacturer Part#: |
SI7540DP-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N/P-CH 12V 7.6A PPAK SO-8 |
| More Detail: | Mosfet Array N and P-Channel 12V 7.6A, 5.7A 1.4W S... |
| DataSheet: |  SI7540DP-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Base Part Number: | SI7540 |
| Supplier Device Package: | PowerPAK® SO-8 Dual |
| Package / Case: | PowerPAK® SO-8 Dual |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 1.4W |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 17 mOhm @ 11.8A, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 7.6A, 5.7A |
| Drain to Source Voltage (Vdss): | 12V |
| FET Feature: | Logic Level Gate |
| FET Type: | N and P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SI7540DP-T1-E3 is a dual N-channel MOSFET power array designed for a wide range of applications. It offers the highest performance and highest power density of any integrated solution. The device consists of two discrete N-channel MOSFETs, each capable of delivering up to 30A of continuous current, with an on-state resistance of 0.6mΩ per channel. This makes it ideal for high-current applications, such as motor control, power supplies and motor drive circuits.
The SI7540DP-T1-E3 is designed to provide efficient power conversion and control. It has a wide input voltage from 4.5V to 24V with a high total power rating of up to 90A. The device includes a built-in gate-drive amplifier and a wide range of protection features, such as load-back protection, short-circuit protection, over-temperature protection, EMI filtering and over-voltage protection.
The working principles of the SI7540DP-T1-E3 are based on the use of the two integrated N-channel MOSFETs. This power array utilizes the saturation characteristics of the MOSFETS to control current flow from the source to the drain. For example, when the gate voltage is applied below the threshold voltage, the MOSFET is in the off-state, preventing current flow from source to drain. When the gate voltage is applied above the threshold voltage, the MOSFET is turned on and allows current to flow from source to drain. The gate-drive amplifier provides the necessary voltage and current to control the switching of the MOSFET.
The SI7540DP-T1-E3 can be used in a wide range of applications, such as motor control, DC/DC converters, motor drive circuits and power supplies. Its high efficiency and wide input voltage range make it ideal for use in high-current applications. Its low on-state resistance, high power rating and integrated protection features make the SI7540DP-T1-E3 the ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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