Allicdata Part #: | SI8902AEDB-T2-E1-ND |
Manufacturer Part#: |
SI8902AEDB-T2-E1 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | N-CHANNEL 24-V (D-S) MOSFET |
More Detail: | Mosfet Array 2 N-Channel (Dual) 24V 11A 5.7W Surfa... |
DataSheet: | SI8902AEDB-T2-E1 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.20735 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 24V |
Current - Continuous Drain (Id) @ 25°C: | 11A |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 5.7W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UFBGA |
Supplier Device Package: | 6-Micro Foot™ (1.5x1) |
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The SI8902AEDB-T2-E1 is a dual FET array IC by Vishay Intertechnology. This device is a generalized power device, featuring very low gate charge (Qg). It combines two independent N‑channel FETs in a single package. One chip can be used as a single switch or dual switches within one power supply stack. The Si8902AEDB-T2-E1 is a low on-resistance, low absolute threshold voltage dual FET array and is available in SOIC-8 package.
The SI8902AEDB-T2-E1 has a wide range of applications. It can be used for switch mode power supply applications such as digital power, adjustable voltage switching, and low power control systems. It can be used in a DC to DC converter, a DC-DC buck converter, and a similar power supply, or an electronic ballast, as well as other applications. It can also be used as a voltage and current regulator and as an active bridge rectifier.
The internal structure of the SI8902AEDB-T2-E1 is very simple. It is made up of two separate silicon NMOS transistors, one high-side FET (H1) and one low-side FET (L1). The high-side FET has an active channel that is connected to a common gate, which is in turn connected to a common drain. The low-side FET is connected to the common drain by the same common gate. Both transistors are connected to a single supply voltage. The central feature of the SI8902AEDB-T2-E1 is that it allows an adjustable gate voltage that is controlled by a small control voltage.
The working principle of the SI8902AEDB-T2-E1 is simple. When a small control voltage is applied to the gate of the high-side FET, the resistance between the source and drain of the FET is reduced, allowing a current to flow. The current is then controlled by the magnitude of the control voltage applied to the gate. Similarly, when the control voltage is applied to the gate of the low-side FET, the resistance between the source and drain of the FET is also reduced and current is also allowed to flow.
The SI8902AEDB-T2-E1 is an ideal choice for applications that require low-voltage or low-current control. It offers excellent performance with very low power dissipation and it is quite cost-effective. The simple structure and the adjustable gate voltage make it a perfect choice for many different applications.
To sum up, the SI8902AEDB-T2-E1 is a low on-resistance, low absolute threshold voltage dual FET Array IC that can be used in switch mode power applications. It is suitable for many different applications and offers excellent performance with very low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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