SI8902EDB-T2-E1 Discrete Semiconductor Products

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The SI8902EDB-T2-E1 is a type of transistor which is included in the family of Transistors - FETs, MOSFETs - Arrays. In particular, it is a high-voltage, low on-resistance, logic-level N-Channel MOSFET array, making it applicable to a wide range of applications. It is a hybrid part with an isolated DFN package. This transistor is one of the latest type, and it is an ideal device for improving system performance, and features improved performance compared to standard MOSFETs.

The SI8902EDB-T2-E1 is mainly used in high side and low side drivers, power switches, and power management systems. It has the advantages of low on-resistance, high voltage, and fast switching. This transistor can be used in a wide range of applications, such as automotive, medical, industrial and home appliances.

The SI8902EDB-T2-E1 is a 2x3 dual gate N-Channel MOSFET. It has two gate terminals, an N-Channel MOSFET and a P-Channel MOSFET. The N-Channel MOSFET has a voltage rating range of 6V to 20V, and the P-Channel MOSFET has a voltage rating range of -20V to -6V. It has a low on-resistance value of 7.5mΩ and offers high current carrying capabilities.

The SI8902EDB-T2-E1 works on the principle of MOSFET. The MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It is a type of field-effect transistor (FET) which operates by selecting the voltage applied to the gate terminals. By selecting an appropriate voltage to the gate terminal, the electron flow through the device can be controlled and thus the output current can be controlled.

The SI8902EDB-T2-E1 is also optimized for protection. It is designed with a built-in temperature-compensation circuit, which helps to protect the device from thermal runaways. Similarly, it is designed with a Soft-start circuit, which helps to reduce current surge during startup.

The SI8902EDB-T2-E1 also has a low input bias current, which helps to reduce the power dissipation of the device. It also helps to reduce power consumption and improve power efficiency. In addition, it has high frequency operation capability and is capable of switching frequencies up to 100 kHz.

The SI8902EDB-T2-E1 also features small size, low power consumption, low input bias current, fast switching, and high voltage operation. All these features make it an ideal choice for a wide range of applications. It is an ideal device for improving system performance, and enhancing system efficiency.

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