SI8904EDB-T2-E1 Discrete Semiconductor Products |
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Allicdata Part #: | SI8904EDB-T2-E1TR-ND |
Manufacturer Part#: |
SI8904EDB-T2-E1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 3.8A 6-MFP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 30V 3... |
DataSheet: | SI8904EDB-T2-E1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Base Part Number: | SI8904 |
Supplier Device Package: | 6-Micro Foot™ (1.5x1) |
Package / Case: | 6-MICRO FOOT®CSP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | -- |
Current - Continuous Drain (Id) @ 25°C: | 3.8A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) Common Drain |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI8904EDB-T2-E1 is a versatile and powerful MOSFET array that can be used in a variety of application fields. It is a four channel MOSFET array that offers low power consumption and high efficiency. The SI8904EDB-T2-E1 is an ideal solution for applications where power supply noise or power supply current spikes are a concern.
The four channels of the SI8904EDB-T2-E1 each provide a maximum of 5A at an operating voltage of 3.2V. This allows for efficient power handling and reduced power consumption. The device features a temperature range between -40°C and 85°C and is available in both micro-sized and TSSOP packages. The SI8904EDB-T2-E1 is designed to be used in a wide range of applications, from low-power mode control to advanced power management and motor control.
The SI8904EDB-T2-E1 is an excellent choice for a variety of applications due to its versatile design. It is an ideal solution for low-power mode control, power supply noise suppression, motor control, switching power conversion, and automotive control systems. The device is also highly resistant to ESD and surge strikes, providing excellent reliability and safety. The device also features an integrated thermal shutdown and low current detection.
The working principle of the SI8904EDB-T2-E1 is based on the concept of MOSFET circuits. MOSFET is an abbreviation for metal-oxide-semiconductor field-effect transistor, and it works by using electric charges on the gate to control the electric current passing through the device. The SI8904EDB-T2-E1 uses a field-effect transistor (FET) array, which combines the features of multiple MOSFETs, to provide a robust and versatile package for a variety of applications. The SI8904EDB-T2-E1 is designed to be used in high-efficiency boards by providing multiple low-dropout voltage levels.
The SI8904EDB-T2-E1 also features an array of I/O protection circuits. It includes an undershoot protection circuit, an overshoot protection circuit, and a charge pump circuit. This helps to reduce the risk of damage to the device and allows for reliable operation. Additionally, the device includes built-in temperature and current limit circuits, ensuring temperature and current levels are monitored throughout its operating environment.
The SI8904EDB-T2-E1 is a versatile and powerful MOSFET array that can be used in a variety of applications. It is designed with low power consumption and a wide operating temperature range, making it an ideal solution for applications where power supply noise or power supply current spikes are a concern. The device features an array of I/O protection circuits, helping to reduce the risk of damage to the device. Additionally, its integrated thermal shutdown and low current detection further aids in reliable operation.
The specific data is subject to PDF, and the above content is for reference
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