SIA513DJ-T1-GE3 Discrete Semiconductor Products

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The SIA513DJ-T1-GE3 is an array of three p-channel field-effect transistors (FETs,) specially designed for the high-voltage, high-speed switching applications required for modern integrated circuits (ICs.) It is a popular choice for designers looking to achieve low on-resistance and high switching speed in their circuits.

The SIA513DJ-T1-GE3 consists of three p-channel FETs in an inverted staggered mounting arrangement. Each FET has an on-resistance of 3Ω at 25V, and a continuous drain current rating of 600mA. The FETs are controlled by a common Gate voltage, and their Gate-Source capacitance (C_GS) is rated at 3pF. All of these performance specifications make the SIA513DJ-T1-GE3 ideal for switching high-speed digital signals. Additionally, the FETs have excellent off-state breakdown voltage ratings, with a V_BRDG minimum of 500V.

One of the most common applications for the SIA513DJ-T1-GE3 is as a digital switch in high-frequency circuits. In this application, the source pins of the FETs would be connected to ground and their gates driven by an external signal. As the gate voltage switches between low (0V) and high (4V-5V, depending on the logic level of the external signal), the drain pin of the FETs would switch between the low and high logic levels. This would cause the circuit to switch between different states, allowing for high-speed control of external circuitry.

The SIA513DJ-T1-GE3 is also used as a power switch in various types of circuits. This is due to the relatively low on-state resistance of the FETs, as well as the relatively high off-state breakdown voltage ratings. When connected in series with a load, the FETs will provide an efficient and reliable way to control the flow of power. This allows for the precise control of motors, lamps, or other types of power-consuming components, again with a high-speed switching action.

The SIA513DJ-T1-GE3 is an effective and efficient FET array that is suitable for a wide variety of high-speed switching applications. Its low on-state resistance and high off-state breakdown voltage ratings make it an ideal choice for designers looking for an efficient, reliable, and cost-effective solution to their high-speed switching needs.

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