SIA527DJ-T1-GE3 Discrete Semiconductor Products

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	4.5A
Rds On (Max) @ Id, Vgs:	29 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:	500pF @ 6V
Power - Max:	7.8W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	PowerPAK® SC-70-6 Dual
Supplier Device Package:	PowerPAK® SC-70-6 Dual

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The SIA527DJ-T1-GE3 is a part of a semiconductor family known as surface-mount MOSFET array transistors. This type of transistor is specifically designed for use in low-power circuits and logic circuits. It is an ideal choice for power conversion and anti-interference wearable products and automotive electronics.This transistor is capable of providing a low on-resistance without the need for an input amplifier. It also has a high-speed switching capability and can process fast signals with no latency. It has a very low power dissipation and a wide operating temperature range of -40 to +125 degrees Celsius.This type of transistor is constructed from an array of individual transistors. The array consists of a drain, gate, and source terminals. The drain and gate terminals are separated by some distance and are connected with a diffusion layer. The gate acts as a gate for the current that flows into and out of the source. The source acts as a reservoir for the current.When a voltage is applied to the gate terminal, an electric field is created between the drain and gate. This electric field causes electrons to move from the source to the drain and to the gate. As this happens, the current flow increases and decreases. When the current reaches its peak, the electrons cause an avalanche effect that causes the voltage between the drain and gate to rise exponentially.The working principle of the SIA527DJ-T1-GE3 is similar to other MOSFET arrays. When a voltage is applied, the surface electrons move from the source to the drain and to the gate. This creates an electric field between the drain and gate, which causes the voltage to rise exponentially. The amount of current that flows into and out of the source and through the array is determined by the resistance of the individual transistors.The SIA527DJ-T1-GE3 is a popular choice for automotive electronic applications due to its low power dissipation and wide temperature range. It is also used for battery management and portable device operation due to its low on-resistance and fast switching. This type of transistor is also an ideal choice for logic circuits and low-power circuits.The SIA527DJ-T1-GE3 is a safe and reliable choice for any application requiring a low on-resistance MOSFET array. Its fast switching capability and wide temperature range make it a great choice for use in automotive and consumer electronics. It is also an affordable option for low-power circuits, logic circuits, and battery management.

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