SIA517DJ-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIA517DJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA517DJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 12V 4.5A SC-70-6 |
More Detail: | Mosfet Array N and P-Channel 12V 4.5A 6.5W Surface... |
DataSheet: | SIA517DJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SIA517 |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Package / Case: | PowerPAK® SC-70-6 Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 6.5W |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A |
Drain to Source Voltage (Vdss): | 12V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.The SIA517DJ-T1-GE3 is a high-performance FET array with a controlling and driving circuit that can be used for a variety of applications. The SIA517DJ-T1-GE3 delivers a combination of low input capacitance, low power consumption, and high efficiency operation. It includes a built-in logic device which allows the user to program the array to different functions. The array consists of four FETs with three output terminals connected in series, a drain, and a source. The four FETs are connected in an open drain configuration.
The low input capacitance of the SIA517DJ-T1-GE3 allows it to operate at high frequencies while still providing a good signal-to-noise ratio. This device is ideal for switching applications in a variety of fields, such as digital signal processing, communications, and instrumentation. The built-in logic device enables the user to easily program the array to different functions without the need for external components.
The working principle of the SIA517DJ-T1-GE3 is based on the principle of MOSFETs. MOSFETs have low power consumption and are capable of providing high switching speeds and excellent noise immunity. The SIA517DJ-T1-GE3 utilizes the principle of MOSFETs to switch between digital and analog signals at high frequencies. This type of array is capable of handling a wide range of power levels, from milliwatts to several watts.
The SIA517DJ-T1-GE3 is suitable for a wide range of applications including audio or video signal conditioning, signal switching, power control, and microwave link. This type of FET array is also widely used in low power, low-noise mobile communications and instrumentation systems. This device is also suitable for applications such as wireless data transfer, wireless charging, encryption, error correction, and power management.
In conclusion, the SIA517DJ-T1-GE3 is a high-performance FET array suitable for a wide range of applications. This type of array is capable of providing a combination of low input capacitance, low power consumption, and high efficiency operation. Its built-in logic device allows the user to easily program the array to different functions. The principle of its operation is based on the principle of MOSFETs and is therefore able to handle a wide range of power levels. It is suitable for applications such as audio or video signal conditioning, signal switching, power control, and microwave link.
The specific data is subject to PDF, and the above content is for reference
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