SKY65806-636LF RF/IF and RFID |
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Allicdata Part #: | 863-2003-2-ND |
Manufacturer Part#: |
SKY65806-636LF |
Price: | $ 0.67 |
Product Category: | RF/IF and RFID |
Manufacturer: | Skyworks Solutions Inc. |
Short Description: | LTE LNA 3400-3800MHZ WITH BYPASS |
More Detail: | RF Amplifier IC 3.4GHz ~ 3.8GHz |
DataSheet: | SKY65806-636LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.60386 |
6000 +: | $ 0.58149 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Frequency: | 3.4GHz ~ 3.8GHz |
P1dB: | -8dBm |
Gain: | 13.5dB |
Noise Figure: | 1.2dB |
Voltage - Supply: | 1.6 V ~ 3.3 V |
Test Frequency: | -- |
Package / Case: | 6-UFDFN |
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RF amplifiers are used in a variety of applications to boost signal strength in radio frequency (RF) communication systems. The SKY65806-636LF application field and working principle is no exception. This particular amplifier is designed to provide a wideband linear gain between 600 MHz and 6 GHz, with low noise figure, high isolation, and low insertion loss.
Specifically, the SKY65806-636LF is crafted to provide a gain of up to 15 dB with extremely low noise figure and high linearity. Its wideband RF amplifier design is supposedly tailored for applications that require control over the intensity of the amplified signal. This enables the device to adapt to different input signals.
High isolation is a desirable trait for RF amplifiers since it helps prevent cross-talk between the input and output of the amplifier. In this respect, the SKY65806-636LF has an isolation level of up to 55 dB, making it an ideal choice for applications that require high levels of isolation. It also exhibits an insertion loss of less then 0.7 dB between 600 MHz and 6 GHz.
The construction of the SKY65806-636LF follows a two-stage design featuring both semiconductor and lumped-element components. The first stage of the amplifier is the device\'s semiconductor component, which consists of a pair of specially designed FET transistors. The semiconductor stage is responsible for the device\'s low noise figure and high linearity, as well as providing gain. The second stage is the amplifier\'s lumped-element design, which is used to increase the isolation of the amplifier by allowing current to pass in only one direction.
In addition to its other attributes, the SKY65806-636LF also features an optional control circuit, which allows the user to adjust the gain of the device and control the out-of-phase signal using an external voltage. This makes it possible to precisely adjust the amplitude and phase response of the amplifier during modulation.
The wideband, high-isolation design of the SKY65806-636LF makes it an ideal choice for a variety of RF amplifier applications, including satellite television receivers, low-noise detectors, and communication systems. Its two-stage design offers a combination of low noise figure, high linearity, and high isolation, allowing it to perform reliably and accurately in any application.
The specific data is subject to PDF, and the above content is for reference
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