Allicdata Part #: | SLA5212-ND |
Manufacturer Part#: |
SLA5212 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET 3N/3P-CH 35V 8A 15-SIP |
More Detail: | Mosfet Array 3 N and 3 P-Channel (3-Phase Bridge) ... |
DataSheet: | SLA5212 Datasheet/PDF |
Quantity: | 59 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 35V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | 15-SIP Exposed Tab, Formed Leads |
Supplier Device Package: | 15-ZIP |
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SLA5212 is a silicon large area array transceiver containing 12 N-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) in an integrated circuit (IC). It is designed to provide a low-power, low-cost solution for antenna switching and other applications. The SLA5212 is designed to operate at up to 4 amps and a breakdown voltage of up to 4,500V. It is available in a variety of package sizes and is compliant with RoHS, EMC and CE standards.
The SLA5212 is suitable for a variety of applications such as RF front end, energy management, automotive and industrial control. It is also suitable for use as a switch for RF signal switching, RF front end, cellular radio, GPS, security and remote control systems. The device is also suitable for low impedance antenna systems.
The SLA5212 uses an array of twelve N-channel MOSFETs which are connected in parallel to provide a low-cost, low-power solution. The device is designed to operate with a low voltage drop and minimal power dissipation, which makes it ideal for low-voltage, low-power applications. The device is designed to operate over a wide range of voltages and currents, making it suitable for a variety of applications.
The SLA5212 device has an internal protection circuit which is designed to protect it from over-voltage and over-current conditions. This protection circuit is designed to protect the device from both static and dynamic stresses. The device also has ESD protection which is designed to protect the device from Electrostatic discharge.
The SLA5212 also has an internal temperature compensation feature which is designed to compensate for temperature variations. This feature allows the device to operate over a wide range of temperatures. The device is also designed to operate in a wide range of environments, including humid and dusty conditions.
The SLA5212 works by controlling the source and drain terminals of the MOSFETs. When the gate voltage of the MOSFET is changed, the source and drain currents are changed respectively. By controlling the gate voltage, the SLA5212 can be used to switch between high and low impedances, or to selectively turn on and off the power supply to optimize power consumption. These features make the SLA5212 ideal for applications requiring precise control of multiple power sources.
The SLA5212 is designed to be used in low-power and low-voltage applications and is available in a number of package sizes. The device is compliant with a variety of standards, including RoHS, EMC and CE standards. The device is well suited for a variety of applications and is an ideal solution for antenna switching and other low-voltage and low-power applications. The SLA5212 is an excellent choice for a low-cost, low-power switching solution.
The specific data is subject to PDF, and the above content is for reference
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