SLA5085

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The SLA5085 is a high-performance array of eight power MOSFETs (metal oxide semiconductor field-effect transistors) suitable for applications such as output power stages in audio power amplifiers, power switching, and power control circuits. This array offers high-current, low-voltage drop capability, and superior thermal performance. It is able to switch currents up to 125A and can be characterized by its low intrinsic gate-source capacitance and low on-resistance.

The working principle of the device is based on the capacitance of the MOSFET gate and the drain-source voltage. In a MOSFET, the capacitance of the gate is linked to the drain-source voltage. When the drain-source voltage is increased, the capacitance increases and this causes the gate voltage to decrease. As the gate voltage decreases, the current flowing through the channel increases, allowing more current to flow through the device. This effect is known as "channel enhancement" and is used to increase the current handling capability of the SLA5085.

The SLA5085 is also designed to work with high-frequency switching applications. Due to its low intrinsic gate-source capacitance, the device has a fast switching speed allowing it to be used in high-frequency switching applications. The device is designed to switch currents up to 125A and can be operated up to 25A without any significant performance degradation. The device also has a good temperature performance with low thermal resistance at high temperatures.

The SLA5085 is also designed to operate at high temperatures. The device is able to operate over a wide range of temperature from -45°C to +175°C and has superior thermal performance. This makes the device suitable for applications that require reliable operation over a wide temperature range. The device also has low gate-source capacitance making it ideal for applications that require fast switching speeds such as digital control circuits.

The SLA5085 is an 8-nMOSFET array designed for operation in high temperature, high-current environments. The device has low intrinsic gate-source capacitance and low on-resistance characteristics providing high-current and low-voltage capability. The device is suitable for use in power switching, output power stages in audio power amplifiers, and power control circuits. Additionally, its fast switching speed and good thermal performance make it suitable for use in high-frequency switching applications and high temperature operating conditions.

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