SLD8S57A Allicdata Electronics
Allicdata Part #:

F8160TR-ND

Manufacturer Part#:

SLD8S57A

Price: $ 1.95
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 57V 92.7V SMTO-263
More Detail: N/A
DataSheet: SLD8S57A datasheetSLD8S57A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
500 +: $ 1.77890
1000 +: $ 1.50028
Stock 1000Can Ship Immediately
$ 1.95
Specifications
Voltage - Clamping (Max) @ Ipp: 92.7V
Supplier Device Package: SMTO-263
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 7000W (7kW)
Current - Peak Pulse (10/1000µs): 75.5A
Series: Automotive, AEC-Q101, SLD8S
Voltage - Breakdown (Min): 63.8V
Voltage - Reverse Standoff (Typ): 57V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Introduction to TVS Diodes

A transient-voltage-suppression (TVS) diode is a type of diode designed to protect sensitive electronic components from high voltage spikes or transients caused by electrostatic discharges (ESD) or other power problems. TVS diodes are used in a variety of applications, including power supplies for desktop computers, automobile electronics, and even military equipment like radar systems. TVS diodes are also used to protect against voltage surges due to lightning strikes or accidental contact with high voltage lines. In many cases, TVS diodes are essential components in protecting sensitive electronic equipment from damage.

SLD8S57A Application Field and Working Principle

The SLD8S57A is a bidirectional transient voltage suppression diode, designed to protect sensitive electronics from voltage spikes or transients up to 20A, commonly caused by electrostatic discharge (ESD).

Typical applications of the SLD8S57A include consumer electronics such as smartphones or tablets, automotive electronics such as CAN bus cables, and also industrial equipment such as pressure and level switches or any other system protected from ESD.

The SLD8S57A consists of two junction formed by silicon and gallium arsenide, which provides the device with both high reverse voltage and high peak current capability. The SLD8S57A is optimized for very low capacitance, which reduces signal distortion in high-speed applications. The device also features low clamping voltage and a high surge current capability, allowing it to protect sensitive electronics from voltage spikes and spikes of up to 20A.

The SLD8S57A works by clamping the voltage spikes or transients to a safe level. When the voltage reaches the applied maximum reverse voltage, the P-N junction conducts current, reducing the total voltage and amount of current flowing through the system. Once the voltage volt across the diode drops below the clamping voltage, the current is cut off and the voltage is returned to its normal operating level. This process happens very quickly, typically within a few nanoseconds. This allows the SLD8S57A to protect sensitive electronics from ESD, lightning strikes, and accidental contact with high voltage lines.

The SLD8S57A also features several performance advantages. The device has low reverse leakage current, so it does not waste energy when it is in its off-state. Additionally, the device’s low series resistance ensures that the voltage is clamped at a low level, which reduces the risk of damage to sensitive electronics. The low series resistance also means that the SLD8S57A can handle higher peak surge current, reducing the risk of a false alarm due to current overload.

Overall, the SLD8S57A is an ideal choice for applications needing protection from voltage transients and ESD. With its low capacitance, high surge current capability, and low clamping voltage, the device is optimized for high-speed applications, allowing it to protect sensitive electronics from damage.

The specific data is subject to PDF, and the above content is for reference

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