SMC5K13A-M3/I

Voltage - Clamping (Max) @ Ipp:	21.5V
Supplier Device Package:	DO-214AB (SMCJ)
Package / Case:	DO-214AB, SMC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	5000W (5kW)
Current - Peak Pulse (10/1000µs):	232.6A
Series:	TransZorb®
Voltage - Breakdown (Min):	14.4V
Voltage - Reverse Standoff (Typ):	13V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The Technology behind SMC5K13A-M3/I units is quite advanced and offers a wide dual use application, both as a stand alone device for protection from high voltage transients, as well as a parallel TVS diode array for achieving the ultimate power package. Its high voltage protection feature is achieved by using two heavily doped silicon PN junctions in a single low frequency package, with a peak reverse stand-off voltage (PSTD) rating of up to 5.6 kV. It is an ideal choice for use in power supplies, data systems, automotive circuit boards, and other power-sensitive applications where transient voltage and ESD protection is critical.

Application Field

SMC5K13A-M3/I is a wide dual use TVS – Diode product. It is well suited for use in applications such as remote control or automation, remote measurement, communications, and low-level control, portable devices, or for use in automotive and medical. It can accept an input voltage up to 5.6 kV, which is far greater than most typical components on the market, making it a popular choice for high voltage applications. There are a variety of input conditions and applications for which the unit can be used. In automotive applications, the device can provide protection from transient voltage in alternator and signal lines, due to the low internal capacitance. In medical electronics, it can be used to protect both the equipment and the patient. The device can also be applied in data processing and communication, where it will provide ESD protection. Due to the short propagation delay of the device, it can also be applied in high frequency switching applications.

Working Principle

The working principle behind the device is based on the operation of the insulated-gate field-effect transistor (IGFET). An insulated-gate field-effect transistor (IGFET) is a three-terminal device composed of a semiconductor substrate, a source, and a drain. When an external voltage is applied to the gate of the device, it controls the current that flows between the source and drain terminals. In the case of the SMC5K13A-M3/I, the IGFET is used to instantly short circuit an input voltage transient. This is achieved by the combination of a single low frequency package and two heavily doped silicon PN junctions. When the external power signal exceeds the peak reverse stand-off voltage (PSTD) limit, the two PN junctions abruptly short circuit the input voltage transient. This offers superior protection in transient voltage and ESD applications, while still allowing the device to function as a low power package. Furthermore, the SMC5K13A-M3/I also offers adequate over-voltage protection due to its low drain to source resistance. This makes it ideal for use in applications that must meet strict safety requirements, such as medical or automotive electronics.

Conclusion

SMC5K13A-M3/I is a high voltage protection device that is used to protect power sensitive applications like remote control or automation, remote measurement, communications, and low-level control, portable devices, medical and automotive, as well as other high voltage applications. It utilizes two heavily doped silicon PN junctions in a single low frequency package to instantly short circuit an input voltage transient. In addition, the device offers excellent over-voltage protection due to its low drain to source resistance, enabling it to meet strict safety requirements. This makes the SMC5K13A-M3/I an ideal choice for both standalone and parallel application, offering the utmost power package available.

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