SMLJ45A-QH

Current - Peak Pulse (10/1000µs):	41.2A
Supplier Device Package:	SMC (DO-214AB)
Package / Case:	DO-214AB, SMC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	3000W (3kW)
Series:	Automotive, AEC-Q101, SMLJ
Voltage - Clamping (Max) @ Ipp:	72.7V
Voltage - Breakdown (Min):	50V
Voltage - Reverse Standoff (Typ):	45V
Unidirectional Channels:	1
Moisture Sensitivity Level (MSL):	--
Type:	Zener
Lead Free Status / RoHS Status:	--
Part Status:	Active

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Introduction to SMLJ45A‑QH

The SMLJ45A‑QH is a TVS diode designed to protect sensitive electronic equipment from transient voltage events. The device is made of a dynamic matrix of low-capacitance silicon diodes to provide a multi-level structure that forms a protective barrier for the semiconductor elements of the circuit. The SMLJ45A‑QH has an insertion loss of less than 1 dB, a breakdown voltage of 45 V for DC or 150 V for AC, and a peak pulse power rating of 2000 W.

Application

The SMLJ45A‑QH is ideal for protecting electronic equipment from overvoltage events such as ESD, EFT, and surge events. It is often used in consumer electronics, computer systems, electrical and electronic components, telecommunications, automotive, industrial, and medical applications, as its low capacitance ensures signal integrity of transmitted data.The SMLJ45A‑QH is also suitable for protecting rechargeable batteries from overcharge and overdischarge events, as its dynamic matrix of low-capacitance silicon diodes ensure that the cell voltage remains within allowable limits.

Working Principle

As an overvoltage event occurs, the SMLJ45A‑QH initiates a series of clamping actions to protect the connected circuitry. Firstly, the device\'s low-capacitance silicon diodes form an electrical barrier which limits the voltage spike amplitude. Secondly, the internal dynamic matrix of silicon diodes increases the clamping action to ensure the voltage spike does not exceed ±45 V for DC or ±150 V for AC. Finally, the SMLJ45A‑QH limits the let-through energy to below the maximum allowable threshold, allowing it to protect the connected device form potential damage.

Advantages

The SMLJ45A‑QH offers several advantages over traditional electrostatic discharge (ESD) protection devices. Firstly, its multi-level protection structure ensures that the device is able to protect connected circuitry from even severely high overvoltages. Secondly, its low capacitance ensures signal integrity of transmitted data, making it ideal for sensitive electronic equipment. Finally, its peak pulse power rating of 2000 W ensures that it can protect against high-transient events, making it suitable for a range of industrial applications.

Conclusion

The SMLJ45A‑QH is a low-capacitance TVS diode designed to protect sensitive electronic equipment from transient voltage events. The device has an insertion loss of less than 1 dB, a breakdown voltage of 45 V for DC or 150 V for AC, and a peak pulse power rating of 2000 W. It is ideal for protecting electronic equipment from overvoltage events such as ESD, EFT, and surge events, and for protecting rechargeable batteries from overcharge and overdischarge events. Its multi-level protection structure, low capacitance, and high peak pulse power rating make it suitable for a range of applications in consumer electronics, computer systems, electrical and electronic components, telecommunications, automotive, industrial, and medical industries.

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