
Allicdata Part #: | SP8J1FU6TB-ND |
Manufacturer Part#: |
SP8J1FU6TB |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2P-CH 30V 5A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 5A 2W Surface ... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.48904 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | *J1 |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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SP8J1FU6TB Application Field and Working Principle
The SP8J1FU6TB is a type of Field-Effect Transistor (FET) array and is commonly used for analog and digital applications. FETs, particularly this variety, are attractive for a wide range of applications and are highly integrated, making them attractive for high-volume applications and products.
Basic overview and working principle
The SP8J1FU6TB is an array type of FET consisting of 8 n-channel FETs. Each n-channel FET is silicon nitride passivated to improve its performance. All 8 FETs are connected in parallel in this integrated circuit, making it suitable for high-frequency applications. Each FET provides low on-resistance and a low-capacitance body-diode. This helps to minimize power consumption and minimize signal distortion.
FETs are voltage operated devices, meaning that their current gain is a function of the voltage applied to the gate. When a positive voltage is applied to the gate, it diode-connects the source and drain terminals, allowing current to flow between them.
The SP8J1FU6TB offers a low on-resistance and a low-capacitance body-diode. This makes it suitable for high-frequency applications. It also has a low “turn-on” voltage, which makes it suitable for switching faster signals. Furthermore, the device can be switched off with a low voltage, which allows faster signal transmission.
Applications
The low on-resistance and low-capacitance body-diode of the SP8J1FU6TB make it suitable for a wide range of analog and digital applications. They are especially suitable for high-frequency applications, such as power converters, power management, and switching regulators. The FETs are also ideal for automotive applications, such as engine control modules, electric power steering, and airbag control. They can also be used for industrial applications, such as motor control and lighting.
The FETs in this integrated circuit are also suitable for high-speed switching applications, such as Ethernet and telephone line drivers, audio amplifiers, and PLCs. Furthermore, these FETs are also suitable for applications where high-current drives and protection are required, such as fluorescent lighting ballasts and home automation.
Conclusion
The SP8J1FU6TB FET array is an attractive choice for a wide variety of analog and digital applications. It offers a low on-resistance and a low-capacitance body-diode which makes it suitable for high-frequency applications, such as power converters, power management, and switching regulators. It can also be used for automotive, industrial, and high-speed switching applications.
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