SP8J1FU6TB Allicdata Electronics
Allicdata Part #:

SP8J1FU6TB-ND

Manufacturer Part#:

SP8J1FU6TB

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2P-CH 30V 5A 8SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 5A 2W Surface ...
DataSheet: SP8J1FU6TB datasheetSP8J1FU6TB Datasheet/PDF
Quantity: 1000
2500 +: $ 0.48904
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Base Part Number: *J1
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: --
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SP8J1FU6TB Application Field and Working Principle

The SP8J1FU6TB is a type of Field-Effect Transistor (FET) array and is commonly used for analog and digital applications. FETs, particularly this variety, are attractive for a wide range of applications and are highly integrated, making them attractive for high-volume applications and products.

Basic overview and working principle

The SP8J1FU6TB is an array type of FET consisting of 8 n-channel FETs. Each n-channel FET is silicon nitride passivated to improve its performance. All 8 FETs are connected in parallel in this integrated circuit, making it suitable for high-frequency applications. Each FET provides low on-resistance and a low-capacitance body-diode. This helps to minimize power consumption and minimize signal distortion.

FETs are voltage operated devices, meaning that their current gain is a function of the voltage applied to the gate. When a positive voltage is applied to the gate, it diode-connects the source and drain terminals, allowing current to flow between them.

The SP8J1FU6TB offers a low on-resistance and a low-capacitance body-diode. This makes it suitable for high-frequency applications. It also has a low “turn-on” voltage, which makes it suitable for switching faster signals. Furthermore, the device can be switched off with a low voltage, which allows faster signal transmission.

Applications

The low on-resistance and low-capacitance body-diode of the SP8J1FU6TB make it suitable for a wide range of analog and digital applications. They are especially suitable for high-frequency applications, such as power converters, power management, and switching regulators. The FETs are also ideal for automotive applications, such as engine control modules, electric power steering, and airbag control. They can also be used for industrial applications, such as motor control and lighting.

The FETs in this integrated circuit are also suitable for high-speed switching applications, such as Ethernet and telephone line drivers, audio amplifiers, and PLCs. Furthermore, these FETs are also suitable for applications where high-current drives and protection are required, such as fluorescent lighting ballasts and home automation.

Conclusion

The SP8J1FU6TB FET array is an attractive choice for a wide variety of analog and digital applications. It offers a low on-resistance and a low-capacitance body-diode which makes it suitable for high-frequency applications, such as power converters, power management, and switching regulators. It can also be used for automotive, industrial, and high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SP8J" Included word is 10
Part Number Manufacturer Price Quantity Description
SP8J65TB1 ROHM Semicon... 0.77 $ 1000 MOSFET 2P-CH 30V 7A 8SOIC...
SP8J1FU6TB ROHM Semicon... 0.54 $ 1000 MOSFET 2P-CH 30V 5A 8SOIC...
SP8J5TB ROHM Semicon... 1.04 $ 1000 MOSFET 2P-CH 30V 7A 8-SOI...
SP8J1TB ROHM Semicon... -- 1000 MOSFET 2P-CH 30V 5A 8-SOI...
SP8J2TB ROHM Semicon... 0.0 $ 1000 MOSFET 2P-CH 30V 4.5A 8-S...
SP8J3FU6TB ROHM Semicon... 0.39 $ 1000 MOSFET 2P-CH 30V 3.5A 8SO...
SP8J5FU6TB ROHM Semicon... 0.78 $ 1000 MOSFET 2P-CH 30V 7A 8SOIC...
SP8J4TB ROHM Semicon... 0.0 $ 1000 MOSFET 2P-CH 30V 2A 8-SOI...
SP8J66TB1 ROHM Semicon... 0.9 $ 1000 MOSFET 2P-CH 30V 9A 8SOIC...
SP8J2FU6TB ROHM Semicon... 0.44 $ 1000 MOSFET 2P-CH 30V 4.5A 8SO...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics