SP8J4TB

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Base Part Number:	*J4
Supplier Device Package:	8-SOP
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power - Max:	2W
Input Capacitance (Ciss) (Max) @ Vds:	190pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:	2.4nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	235 mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C:	2A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Logic Level Gate
FET Type:	2 P-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SP8J4TB is a device belonging to a family of components known as Array Field Effect Transistor (FET), and stands for Super-Power Array FET. It is a series of transistors and a type of field-effect transistor (FET), specifically a Metal Oxide Semiconductor FET (MOSFET), in which a number of identical FETs are combined in parallel in a single package. Since the introduction of FET, they have been widely used in many applications and are highly efficient in power control, signal amplification and signal distribution. SP8J4TB especially is used in applications where high power control is needed, such as magnetic motor drives. The SP8J4TB uses a unique structure to reduce the on-resistance and increase the voltage tolerance of the device. The combination of FETs also allows the SP8J4TB to provide a higher current capacity than single FET.The working principle of a SP8J4TB is simple. It uses the fact that when a FET is in the off state, the gate voltage is connected to the source voltage and the drain voltage is a low impedance. When a voltage is applied to the gate, electrons are attracted from the source to the drain and the impedance of the drain increases significantly. This increase in impedance effectively functions as a switch and can be used to control the current flow.To use the SP8J4TB, first the power source needs to be connected to the source and drain of the FET, followed by connecting the gate voltage to the input circuit of the FET. When the voltage at the gate rises above a threshold voltage, the FET turns on, allowing the current to flow from the source to the drain, thus providing an effective switch. For high power applications, several FETs can be connected in parallel in a SP8J4TB package. The package provides high integration and the FETs are connected in parallel, allowing high current capacity and fast switching. The device also has the advantages of high power dissipation, low voltage drop and low power consumption.Due to its simple structure, high power capacity and fast switching capability, the SP8J4TB is an ideal solution for applications where high power control is needed. It can be used in a variety of applications, such as DC-DC converters, power amplifiers, magnetic motor drives, and other power control applications. The SP8J4TB is useful for a wide range of devices and has numerous benefits, including low power consumption, low voltage drop, fast switching, and high power capacity. It is an excellent choice for applications where high power control is needed, making it a popular device for many applications.

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