SP8J3FU6TB Allicdata Electronics
Allicdata Part #:

SP8J3FU6TB-ND

Manufacturer Part#:

SP8J3FU6TB

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2P-CH 30V 3.5A 8SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 3.5A 2W Surfac...
DataSheet: SP8J3FU6TB datasheetSP8J3FU6TB Datasheet/PDF
Quantity: 1000
1 +: $ 0.39000
10 +: $ 0.37830
100 +: $ 0.37050
1000 +: $ 0.36270
10000 +: $ 0.35100
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Base Part Number: *J3
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The SP8J3FU6TB is a part of the transcription array family, a translation of logical information from one form to another. This particular array includes up to 12 SP8J3FU6TB devices, all connected to form a single integrated circuit (IC). Each device of the array may serve as an input, a driver, an output, or a combination of different functions. A combination of these devices allows the circuit to perform a variety of logical operations, by simultaneously receiving, driving, and passing different electrical signals through the same circuit.

The SP8J3FU6TB device is a field effect transistor (FET). Though FETs have been around since the 1950s, they represent the backbone of today’s electronics. This type of transistor is based on a metal oxide semiconductor, which is typically made of silicon. The metal oxide layer provides the transistor with its unique characteristic, which is the ability to control the flow of current through the device.

In the context of the SP8J3FU6TB array, the FETs work together, along with other active parts, to provide logic functions. One example could be a simple NAND gate. This consists of two SP8J3FU6TB FETs, each with source and drain electrodes. The source electrode of one FET is connected to the drain electrode of the other FET. The output of the gate, which is connected to the source of the first FET, is ‘high’ when either input is ‘low’.

An example of a more complex logic function that can be implemented with an SP8J3FU6TB array is a four-bit magnitude comparator. This would require four of the FETs to form two pairs, one for each of the two 4-bit binary numbers that are being compared. The two pairs would be connected in a differential circuit, with each pair having a common drain and two separate sources. The outputs from each FET would control the pull-up and pull-down resistors, to compare the two 4-bit numbers.

Circuit diagrams for the two examples presented above can be easily constructed using the input and output connections provided by the SP8J3FU6TB array. The beauty of this device is that it makes single integrated circuits extremely versatile. This device comes in a variety of sizes, so engineers can design their circuits with the exact number of FETs they require to perform their desired logic functions.

In conclusion, the SP8J3FU6TB array is a versatile and reliable device that can be used to achieve a variety of logic functions. This array is based on field effect transistors, which are the main components used in today’s modern electronics. Utilizing the range of inputs and outputs available, engineers can design both simple and complex integrated circuits, without the need for additional components.

The specific data is subject to PDF, and the above content is for reference

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