| Allicdata Part #: | SQ4917EY-T1_GE3TR-ND |
| Manufacturer Part#: |
SQ4917EY-T1_GE3 |
| Price: | $ 0.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2 P-CHANNEL 60V 8A 8SO |
| More Detail: | Mosfet Array 2 P-Channel (Dual) 60V 8A (Tc) 5W (Tc... |
| DataSheet: |  SQ4917EY-T1_GE3 Datasheet/PDF |
| Quantity: | 5000 |
| 1 +: | $ 0.58000 |
| 10 +: | $ 0.56260 |
| 100 +: | $ 0.55100 |
| 1000 +: | $ 0.53940 |
| 10000 +: | $ 0.52200 |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 P-Channel (Dual) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Rds On (Max) @ Id, Vgs: | 48 mOhm @ 4.3A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1910pF @ 30V |
| Power - Max: | 5W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
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The SQ4917EY-T1_GE3 is a silicon N-channel MOSFET array available in a plastic TO-220 package. It has a maximum gate-source breakdown voltage (BVdss)of 20V and a drain-source breakdown voltage (RDS(ON)) of 40 mΩ.
The SQ4917EY-T1_GE3 is typically used for switching applications, as it is able to provide a fast switching action with superior heat dissipation and electric noise reduction. This product can also be used for load switching, logic level shifting, and voltage translation.
The SQ4917EY-T1_GE3 silicon array consists of 4 N-channel enhancement mode power MOSFETs. These power MOSFETs are designed to have superior ESD protection against negative transient voltage pulses, as well as superior ESD protection against positive transient voltage pulses, as well as superior hot carrier immunity.
The working principle of the SQ4917EY-T1_GE3 is based on the MOSFET model. The drain-source voltage (VDS) forms an electric field between the source and the drain. When a voltage is applied to the gate, it forms an electric field which is perpendicular to the electric field between the source and drain. This electric field influences the flow of current through the device. The transistor “opens” when the gate-source voltage VGS and the drain-source voltage VDS are greater than the threshold voltage Vth, allowing current to flow from the drain to the source. When the gate voltage VGS is less than the threshold voltage VDS, the device acts as an insulation, and does not allow current to flow.
The SQ4917EY-T1_GE3 is ideal for applications requiring a fast switching MOSFET with superior ESD protection. It is also suitable for applications such as load switching, logic level shifting, and voltage translation. The product is available in a small plastic TO-220 package, making it ideal for space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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